S29GL512T11FHIV13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S29GL512T11FHIV13 is an industry-standard, single-mirror quad flat no-leads (QFN) Flash memory device manufactured by Cypress Semiconductor Corporation. Cypress is one of the world’s leading suppliers of innovative, cutting-edge semiconductor solutions. The S29GL512T11FHIV13 is a non-volatile, electrically programmable and erasable read-only memory (EEPROM) device. It is capable of storing up to 8 MB of code and data capsules in a single memory device. The device offers a high-endurance (up to 100K erase/program cycles) with a repeatable low-to-high program/erase cycle time performance.

The S29GL512T11FHIV13 is suitable for a wide range of applications such as industrial equipment, home appliances, medical devices, automotive electronics, embedded systems, digital cameras, and other applications that require large amounts of non-volatile code and data storage. The device is also compatible with a variety of operating systems and CPUs and can be used to store program code, operating system code, and data. The S29GL512T11FHIV13 supports I2C and SPI protocols and speeds up to 66MHz. The device offers unlimited program and erase cycles, low power consumption, and superior overall electrical characteristics.

The S29GL512T11FHIV13 is based on the industry standard equivalent phase change technology. This technology enables the device to store 8MB of code and data with superior endurance and higher write speeds compared to traditional flash memory. In addition to its storage capabilities, this device also offers excellent reliability and low power dissipation.

The S29GL512T11FHIV13 works by utilizing a programmable pair of transistors (PTN) based on phase change material. This PTN is used to store and retrieve data from a single memory cell. The read and write processes are initiated by applying suitable voltages on the control bus signals. The device can be programmed, erased, tested and protected against any unauthorized accesses.

The typical performance specifications for this device include operation voltage range from 2.7V to 4V and access time of about 80ns. The device also has an excellent operating temperature range of -40C to +85C. The device is also available with a die temperature range of -55C to +125C.

In summary, the S29GL512T11FHIV13 is an excellent choice for those seeking a cost-effective, reliable, high-capacity memory solution. With its superior endurance, fast write speeds, and wide operating temperature range, this device provides an ideal solution for industrial equipment, home appliances, automotive electronics, and other applications with large memory requirements.

The specific data is subject to PDF, and the above content is for reference