S29GL512T12TFN010

Series:	GL-T
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Write Cycle Time - Word, Page:	60ns
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	56-TSOP

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S29GL512T12TFN010 application field and working principle

Memory, such as the S29GL512T12TFN010, is a type of integrated circuit component that stores digital data by changes in capacitance or resistance. These devices are extensively used both in consumer electronics and computers because they are cost-effective, reliable and capable of performing a variety of functions.The S29GL512T12TFN010 is a type of non-volatile memory, which is a device that can store data even when there is no power. It is commonly used in a wide range of applications – from browser cache memory to memory for PCBs such as computer control boards.The S29GL512T12TFN010 consists of an array of floating gate transistors, designed to perform both reading and writing operations. Each transistor is composed of two insulated gates, sandwiched between two source and drain electrodes. A source gate stores a small amount of charge, representing a single bit of data. To read from the memory, a small voltage is applied to one of the source or drain electrodes. When the threshold voltage is reached, the floating gate transistor structure conducts, allowing the drain gate to be read. To write to the memory, a voltage is applied to both the source and drain gates, which causes the floating gates to be charged or discharged depending on whether the voltage applied is above or below the threshold voltage. The S29GL512T12TFN010 offers an array of advantages, including low power consumption and high speed access. Furthermore, the memory can be read and written from in parallel, meaning that multiple bits of data can be read or written in a single operation. In addition, the device is relatively insensitive to environmental factors such as humidity, heat, and radiation.The S29GL512T12TFN010 is mainly used in applications where large amounts of data must be stored with minimal power consumption and no volatility. These applications include personal computers, embedded systems, and industrial data processing.In summary, the S29GL512T12TFN010 is a non-volatile memory device composed of an array of floating gate transistors. It offers numerous advantages including low power consumption, high speed access, and immunity to environmental factors. The device is mainly used in applications where large amounts of data must be stored with minimal power consumption and no volatility.

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