S29VS064RABBHI010 Allicdata Electronics
Allicdata Part #:

428-4040-ND

Manufacturer Part#:

S29VS064RABBHI010

Price: $ 3.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M PARALLEL 44FBGA
More Detail: FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108M...
DataSheet: S29VS064RABBHI010 datasheetS29VS064RABBHI010 Datasheet/PDF
Quantity: 1000
1 +: $ 3.18150
Stock 1000Can Ship Immediately
$ 3.5
Specifications
Series: VS-R
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-VFBGA
Supplier Device Package: 44-FBGA (7.5x5)
Description

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The S29VS064RABBHI010 is a type of memory with a wide range of applications in different industries and specifications. Its working principle is based on the organization of data into sectors, pages, and words.

This memory is ideal for applications that require low power, high speed, high endurance, and wide operating temperature range. It is a single-chip solution that is ideal for embedded systems and processors. It is suitable for use in automotive infotainment systems, industrial, consumer, and communications applications.

The main features of the memory are its low power dissipation, high speed data read-write capability, wide operating temperature range, lifetime data retention, and reliable data retention even over extended temperature ranges. It features 4KB sectors, 4KB pages, and 64 words. Its data retention capabilities are certified for over 500K cycles at -40°C to 85°C. It is also capable of withstanding voltage shocks and vibrations.

The S29VS064RABBHI010 memory operates on a differential read/write operation. This enables data transfer to take place at a high speed and with minimal power consumption. Differential read/write also offers features such as low power mode, noise immunity, and high write endurance. The memory also supports multiple data capability, allowing read and write operations to take place with different data types and speeds.

The working principle of the S29VS064RABBHI010 memory is based on the organization of data into sectors, pages, and words. A sector is a logical division of size 4KB and contains an array of memory cells called “pages.” The pages contain an organization of words. Each word has 16 bits and consists of 16 columns of 8 bits, representing an 8-bit data byte. The memory support two kinds of addressing mode: linear addressing (direct reading) and page addressing (sequential reading). Terraram Semiconductor, the manufacturer of the chip, provides instructions on reading the data from this memory.

The S29VS064RABBHI010 memory is an economical and highly efficient memory solution for embedded system applications. Its low power dissipation, high speed data read/write, wide temperature operating range, and reliable data retention make it an ideal choice for embedded system applications. The memory is available from distributors at a reasonable cost and can be used in a wide range of applications in different industries.

The specific data is subject to PDF, and the above content is for reference

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