S29VS256R0SBHW013 Allicdata Electronics
Allicdata Part #:

S29VS256R0SBHW013-ND

Manufacturer Part#:

S29VS256R0SBHW013

Price: $ 4.32
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 256M PARALLEL 44FBGA
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 10...
DataSheet: S29VS256R0SBHW013 datasheetS29VS256R0SBHW013 Datasheet/PDF
Quantity: 1000
2400 +: $ 3.92371
Stock 1000Can Ship Immediately
$ 4.32
Specifications
Series: VS-R
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-VFBGA
Supplier Device Package: 44-FBGA (7.7x6.2)
Description

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The S29VS256R0SBHW013 is a High-Performance, Low Power and Wide Temperature Range 256Mbit CMOS SuperFlash Memory, which is designed for automotive, industrial and consumer electronics. It is designed for easy as well as reliable programming and is supported by a feature-rich architecture that improves reliability and data integrity.

The main application field of the S29VS256R0SBHW013 is automotive, industrial and consumer electronics. In automotive applications, it is used for on-board diagnostics, remote vehicle access, driver safety, dynamic navigation and engine control. In industrial applications, it is used for sensor controllers, industrial automation, facility management and process control. In consumer electronics applications, it is used for set-top boxes, digital video camcorders, digital video recorders, video cameras, digital photo frames, low power embedded modules and includes a range of other high-performance, low-power memory products.

The S29VS256R0SBHW013 memory is renowned for its low power consumption and wide temperature range, making it suitable for use in many environments. It features an innovative write accelerator which speeds up writing of large data. Furthermore, it offers 120MHz maximum data transfer speeds and a x8 burst mode, and can support up to 16 random accesses and multiple write cycles, making it very efficient at handling large data and allowing it to be used in multi-tasking applications.

The working principle of S29VS256R0SBHW013 is quite simple. It is designed to be driven through a standard JEDEC protocol. In addition, it has an embedded Serial Peripheral Interface (SPI) controller and is compatible with standard SPI master and slave interfaces. The memory can be configured as either an 8-bit or 16-bit data bus, depending on the user’s application requirements. When read and write operations are performed, the data is transferred between the controller and memory via the SPI interface. The memory can also be configured as an Asynchronous SRAM interface.

The S29VS256R0SBHW013 is also equipped with an advanced write management system, which helps protect data integrity by allowing for multiple checks and reads of data before it is written to the memory. This helps to ensure that the memory is not corrupted and also prevents any unnecessary data loss. Furthermore, the memory has an on-chip self-diagnostic algorithm which is used to detect any errors and automatically retry operations, further ensuring data integrity.

In short, the S29VS256R0SBHW013 is a high-performance, low power and wide temperature range memory solution that is suitable for use in a variety of applications in the automotive, industrial and consumer electronics markets. It is easy and reliable to program, has an innovative write accelerator, supports up to 16 read/write cycles, and is equipped with an advanced write management system and on-chip self-diagnostic algorithm, helping it to guarantee data integrity.

The specific data is subject to PDF, and the above content is for reference

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