Allicdata Part #: | S2AHE3_A/I-ND |
Manufacturer Part#: |
S2AHE3_A/I |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 1.5A DO214AA |
More Detail: | Diode Standard 50V 1.5A Surface Mount DO-214AA (SM... |
DataSheet: | S2AHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
6400 +: | $ 0.06459 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 50V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S2AHE3A/I Diode is specifically designed for applications that requirehigh switching power. It is a rectifying diode with a single chip structure. Its features include an optimized structure, an ultra-low capacitance rate, and robust electrical characteristics. This diode boasts several advantages over traditional diodes, making it perfect for applications such as power supplies, motor drivers, invertors and other high power switching applications.
In the context of S2AHE3A/I direct rectification, two types of active components–a diode and a transistor–are combined. The diode will quickly switch from off to on, giving the transistor enough time to switch from a non-conduction state to a conduction state. This controlled process has several advantages, including low power consumption and a variety of external parameters.
The working principle of the S2AHE3A/I Diode is based on the principles of forward current conduction. It achieves this by connecting a source voltage to the anode of the diode and a load to the cathode of the diode. When the source voltage is positive enough, current will be generated and will flow from the anode to the cathode. The diode is designed so that once it has conducted forward current, very little voltage will remain at the output, thus preventing further conduction of current. In this way, the diode acts as a rectifier.
The S2AHE3A/I Diode has several key features that make it ideal for use in applications that require high switching power. The first is its low capacitance rate, which means that the time required for current to flow is significantly shorter than with conventional rectification. Additionally, the diode is highly resistant to electrical noise, making it suitable for high power switching applications. Finally, the diode features optimized structure, robust electrical characteristics and an ultra-low capacitance rate, giving it superior performance in comparison to regular diodes.
In terms of applications, the S2AHE3A/I Diode is perfect for use in motor drivers, invertors and other high power switching applications. It is also suitable for power supplies and can be used in a variety of other applications that require a high switching power. In addition, the diode is extremely reliable, which is an important consideration for use in high power applications.
In conclusion, the S2AHE3A/I Diode is specifically designed for applications that require high switching power. It is a rectifying diode with a single chip structure and features an optimized structure, an ultra-low capacitance rate and robust electrical characteristics. It is ideal for use in motor drivers, invertors and other high power switching applications. It is also suitable for use in power supplies and can be used in a variety of other applications that require high switching power. Additionally, the S2AHE3A/I Diode is highly reliable, making it an ideal choice for any application requiring high power and performance.
The specific data is subject to PDF, and the above content is for reference
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