S2D Discrete Semiconductor Products

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Diodes - Rectifiers - Single

Schottky barrier diodes (S2Ds) operate differently from other types of rectifier diodes because they employ a reverse-bias Schottky barrier as the rectifying junction. This is made of a thin layer of metal deposited on a semi-insulating substrate material, such as silicon. As their diffusion area is much smaller than regular rectifier diodes, they present a low forward voltage, thereby reducing power losses and making them a preferred choice for high frequency switching, conversion and amplification circuits.

Application field

Schottky barrier diodes are mainly used in switched-mode power supplies (SMPS), radio frequency switching and broadband rectification, as well as in data converters and amplifier applications. They are also increasingly popular in automotive electronics, in microwave links and can be found in any other device which contains rectifiers. Furthermore, S2Ds are also used in electromagnetic interference (EMI) suppression products.

Working principle

S2Ds employ a reverse-biased Schottky barrier as the rectifying junction, with no junction capacitance. This design allows them to switch more quickly and with smaller losses, allowing them to operate at frequencies and voltages far above the capabilities of normal rectifier diodes. As the thin metal layer acts as a low impedance contact to the low voltage side of the rectifier, it allows very low forward voltage drops, eliminating nearly all losses. As a result, the power output from the device is much higher than for other rectifier diodes.

S2Ds also present low switching times due to the lack of reverse recovery in the diode, eliminating losses that occur during the turn-on and turn-off transitions of the diode. This is suitable for use in high frequency switching and pulse applications in which switching times need to be short. Furthermore, S2Ds also have a low reverse leakage current, which means that they can switch efficiently at high frequencies and with high current levels.

Conclusion

In summary, Schottky barrier diodes offer a number of advantages over other types of rectifier diodes, making them the preferred choice for high frequency switching, conversion and amplification circuits. These diodes are highly efficient, with low forward voltage drops, low on-state losses, low switching times and low reverse leakage currents. As a result, they can be found in a wide range of applications including switched-mode power supplies, radio frequency switching, EMI suppression and data converters.

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