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Diodes - Rectifiers - Single

The S2JHM4G Diode Rectifier is a single, high-temperature sensitive, four-quadrant, low capacitance, ultra-fast switching diode, ideally suited for use in a wide range of diode rectifier applications. It is designed to complement existing industry-leading rectifiers, offering superior switching performance in high temperature environments.

Application Field of S2JHM4G

The S2JHM4G is designed for use in high power applications such as power delivery systems, automotive systems, industrial systems, and more. Other applications include RF and high speed data communications, as well as other high-temperature switching applications. Additionally, the S2JHM4G is suitable for use in various combinations to meet various system requirements across multiple lengths and other design requirements.

Working Principle of S2JHM4G

The S2JHM4G utilizes a unique linear region-based structure to provide superior switching performance in high temperature environments. In this region, strong electron-hole pairs are driven through the depletion region quickly, giving the S2JHM4G the highest switching performance compared to any other diode in its class. Additionally, the S2JHM4G features a low capacitance design, allowing it to achieve high switching speeds and low switching losses, making it suitable for voltage-clamp applications.

The S2JHM4G also has a very low reverse leakage current, allowing it to be used in high temperature environments to prevent damage due to thermal runaway effects. Additionally, the S2JHM4G features a low voltage transfer characteristic, allowing it to be used in power delivery systems, automotive systems, and other high-voltage switching applications. As an added benefit, the S2JHM4G’s low resistance design makes it ideal for applications where low conduction losses are required.

The S2JHM4G’s design provides it with a wide range of benefits, making it suitable for a wide range of diode rectifier applications. Its superior switching performance in high temperature environments, low capacitance design, high switching speeds and low conduction losses, and low voltage transfer characteristic make it ideal for a wide range of applications. Additionally, its low leakage current allows it to be used in high temperature environments to prevent damage due to thermal runaway effects.

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