S2KHE3_A/I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S2KHE3_A/I is a single rectifier diode designed for a wide range of applications. It provides a high current and low Vf operation, meaning it can stand up to high levels of power. In addition, it offers up high temperature operation and a wide range of forward current to make it suitable for high-reliability applications.

The S2KHE3_A/I is composed of two main components, a P-type semiconductor material, and an N-type semiconductor material. The two conductive materials create a diode, which is capable of conducting electric currents in one direction. When the direction of the current is reversed, the diode blocks the current and ultimately prevents it from flowing in the opposite direction. This allows the diode to act as an ideal rectifier, regulating and controlling the current in a circuit.

In the case of S2KHE3_A/I, the diode is formed with the help of a combination of a p-type and n-type material. The circumference of the diode is composed of a p-type or positive material, while the core of the diode consists of an n-type or negative material. The core of the diode is known as the junction, and it is made out of a combination of conductive atoms such as gold or silver. These atoms form a connection between the p-type region and the n-type region, allowing current to flow through the diode in only one direction.

These single rectifier diodes are used in a variety of applications. They are ideal for current regulation in medical equipment, automotive, military, industrial, and consumer electronics. They are also commonly used in rectifier circuits as they are ideally suited to provide protection against over-voltage and current spikes, as well as provide efficient power conditioning. In addition, they can be used in switch-mode power supplies, constant voltage supplies, RF amplifiers and many more applications.

The S2KHE3_A/I is designed for high-level reliability and performance, requiring low forward voltage drop and minimal power dissipation. The high-temperature operation makes it suitable for applications that need to withstand high-power and long-term performance. All these factors make this diode an ideal solution for high-reliability and large current applications, such as microprocessor and battery charging.

To summarize, the S2KHE3_A/I is a single rectifier diode designed for a wide range of applications. It is comprised of two main components, a P-type semiconductor material, and an N-type semiconductor material, creating a diode capable of conducting current in one direction. The diode offers high current, low Vf operation, high temperature operation, and a wide range of forward current, making it suitable for a variety of high-reliability and large current applications.

The specific data is subject to PDF, and the above content is for reference