Allicdata Part #: | S2MHR5G-ND |
Manufacturer Part#: |
S2MHR5G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 2A DO214AA |
More Detail: | Diode Standard 2A Surface Mount DO-214AA (SMB) |
DataSheet: | S2MHR5G Datasheet/PDF |
Quantity: | 1000 |
6800 +: | $ 0.05001 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S2MHR5G is a Schottky rectifier diode which was developed to be used in power supply, motor speed control, DC-DC converter, UPS, solar energy systems and battery storage applications. It is also applied for high speed switching and rectifier applications.
The part is composed of an anode, a cathode, a Schottky barrier and a P-type substrate. It is made up of a heavily doped P+ region sandwiched between the anode and the cathode. The Schottky barrier is formed by a thin metal barrier, often made of palladium, which ensures that current only flows in one direction. This barrier reduces the amount of forward voltage needed to activate the device, thus increasing the efficiency of the device.
The working principle of S2MHR5G is simple; current flowing through the anode is forced to pass through the Schottky barrier as opposed to passing through the forward-biased PN junction which is in a reverse biased situation. As a result, the current will be rectified and no current will be able to flow in the reverse direction.
One of the main advantages of S2MHR5G over other diode types is its low voltage drop in forward-biased condition which results in higher efficiency and better dissipative performance. It also has a low capacitance which makes it suitable for high speed switching applications. Additionally, its high temperature performance, high reliability and long-term stability make it an ideal choice for high temperature and high current applications. This device has a wide operating temperature range so it can be used in both military and commercial grade applications.
S2MHR5G can be used in power supply, motor speed control, DC-DC converter, UPS, solar energy systems and battery storage applications. It is ideal for high speed switching and rectifier applications requiring low voltage drop and high performance. It is also suitable for high reliability and long-term stability applications. Its wide operating temperature range makes it suitable for both military and commercial grade applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S2MHE3_A/H | Vishay Semic... | -- | 3750 | DIODE GEN PURP 1KV 1.5A D... |
S2MHM4G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 2A DO214AA... |
S2MHR5G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 2A DO214AA... |
S2MHE3_A/I | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1.5A D... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...