S2SA1774G Allicdata Electronics
Allicdata Part #:

S2SA1774GOSTR-ND

Manufacturer Part#:

S2SA1774G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 50V 0.1A SC75-3
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 140MHz 150m...
DataSheet: S2SA1774G datasheetS2SA1774G Datasheet/PDF
Quantity: 6000
3000 +: $ 0.04683
6000 +: $ 0.04215
15000 +: $ 0.03747
30000 +: $ 0.03513
75000 +: $ 0.03122
Stock 6000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: 2SA1774
Description

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The S2SA1774G is a NPN-type bipolar junction transistor (BJT) in the SOT-323 package. This component integration can be used in a wide range of applications and provides reliable operation with its low-noise and high-voltage characteristics. The structure of the S2SA1774G is a four-layer dual gate continuous single-ended NPN BJT with a top gate surface-mounted on top and bottom gate. It is composed of two N-type and two P-type layers.

The main application field of the S2SA1774G is for automotive, consumer, industrial and lighting applications. It can also be used in power management designs. It is mostly used to drive high-current loads, control power levels, interface with microcontrollers and load switches, monitor power distribution and provide feedback in switching voltage regulators. In addition, it can be used to replace hybrid MOSFETs in applications such as low-side switches, temperature measurement and amplifier output stages.

The working principle behind the S2SA1774G is based on the transistor’s ability to control the flow of current between two terminals, called the collector and the emitter. In an NPN transistor, the current flows from the collector to the emitter when the base voltage is raised above the cut-off point (0.7V). The amount of current flowing through the transistor is proportional to the base current divided by the current gain, also known as the hFE. The collector voltage will be lower than the base voltage when the transistor conducts current, and the voltage drop across the transistor is proportional to the current and the current gain.

The features of the S2SA1774G make it suitable for a wide range of automotive, consumer, industrial and lighting applications. The low-noise and high-voltage characteristics offer reliable operation, while its structure enables superior heat dissipation, reducing the need for additional cooling systems. Its ability to control the flow of current between collector and emitter make it ideal for managing power levels, interfacing with microcontrollers, switching voltage regulators and other applications.

The specific data is subject to PDF, and the above content is for reference

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