S3AHE3/57T

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S3AHE3/57T

S3AHE3/57T is a single-phase silicon rectifier with a hole injection type and a PN junction guard ring. It is an ultrafast diode and has a wide range of applications in many industries. Suited for high-frequency switching power supplies, LED lighting, telecom systems, and other applications, the S3AHE3/57T is specifically designed for high-speed switching performance, low power losses, and long service life.

Application Field

The S3AHE3/57T is designed and manufactured as a semiconductor device that is capable of rectifying current with high efficiency. It is suitable for various applications, including power supplies, DC-DC converters, DC motors, automotive, and other power electronic systems. It is especially well-suited for high-frequency switching power supplies, since it has a low turn-on voltage, a low forward voltage drop, and a low capacitance, making it ideal for high-frequency applications. In addition, its hole injection type provides ultra-fast switching, allowing it to be used in high-speed applications.

The S3AHE3/57T is also suitable for LED lighting, where its fast switching speed can help to reduce power consumption and extend the life of the LED lights. The device can be used in telecom systems, where its low noise performance can help to reduce interference. It is also suitable for controlling automotive systems, where its low flux densities and low forward voltage drop will help to increase efficiency and reduce heat dissipation.

Working Principle

The working principle of the S3AHE3/57T is based on the P-N junction guard ring. The junction guard ring is a special feature that prevents large current flow in the reverse bias direction. The reverse current is limited by the very low threshold voltage of the P-N diode junction. Thus, it is guaranteed that the maximum reverse current flow is limited to a predetermined, safe range.

When the external applied voltage increases, the current flow in the forward direction also increases. As long as the voltage is lower than the breakdown voltage, the current flow remains limited. When the external voltage surpasses the breakdown voltage, the current flow passes through the P-N junction guard ring, and the current flow in the forward direction also increases. The junction guard ring also prevents reverse current flow from Avalanche, resulting in enhanced durability and longer service life of the diode.

As a result, the S3AHE3/57T diode offers excellent performance and reliability in various applications and industries, such as power supplies, telecom systems, LED lighting and automotive industry.

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