Allicdata Part #: | S3BHE3/57T-ND |
Manufacturer Part#: |
S3BHE3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 3A DO214AB |
More Detail: | Diode Standard 100V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | S3BHE3/57T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 2.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S3B |
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The S3BHE3/57T is a type of diode, more specifically a rectifier diode that is classified as single. It belongs to the Schottky Barrier diode family, and has a maximum continuous current rating of 1000mA and a maximum surge current of 3000mA.
This diode is usually employed in a number of applications, the primary two of which are unidirectional current conversion and voltage suppression.
Unidirectional Current Conversion
Unidirectional current conversion is a process whereby a relatively low power current is converted into a higher power form that is capable of providing electricity to an application. It is commonly used to convert audio current into higher power direct current (DC) voltages, improving the quality of sound before it reaches the headset or other output device. It commonly finds application in professional audio equipment and power amplifier design.
Voltage Suppression
Voltage suppression applications are those which require protection from voltage spikes and overcurrent. This type of application usually occurs in industrial and commercial equipment which must be isolated from any potentially hazardous power sources that could otherwise damage the electronic components. The S3BHE3/57T is designed to be able to tolerate fast switch times and voltage peaks, making it ideal for these applications.
Working Principle
The S3BHE3/57T works on the principle of a Schottky Barrier diode, whereby a layer of metal is shifted between two semiconductors. The introduction of a thin layer of metal between the two semiconductors results in fewer charge carriers being present within the junction, resulting in a lower forward voltage across the diode, making it more capable of switching at faster speeds.
When a voltage is applied to the S3BHE3/57T, the potential difference across the junction causes electrons to flow from the n-type region to the p-type region, creating the current flow. When reverse biasing is applied, the diode will not conduct, meaning that only unidirectional current can pass through the component. This process is known as rectification, and is how the S3BHE3/57T is able to convert and/or suppress voltages.
The specific data is subject to PDF, and the above content is for reference
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