Allicdata Part #: | S3DHM6G-ND |
Manufacturer Part#: |
S3DHM6G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 3A DO214AB |
More Detail: | Diode Standard 200V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | S3DHM6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06542 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S3DHM6G is a type of diode rectifier single, also known as a small-Signal Switching Diode. Its primary applications are return circuits, local circuits, AGC, radio tuning, and other small-signal circuits. This high-speed switching diode\'s fast switching and low forward voltage give it the capability of providing a reliable and dependable level of switching in many different types of circuits. Although its circuit design is relatively simple, its operating principles are fundamental and important to understand in order to properly utilize it in any circuit.
The S3DHM6G diode is composed of a P-type semiconductor material, N-type semiconductor material and an insulation layer. The two semiconductor materials are connected by a contact point, forming an NPN (negatively-doped p-type & positively-doped n-type) structure. The P-type semiconductor material is located on the side closest to the insulation layer and the N-type semiconductor material is located on the side closest to the contact point. This diode has two operating states, On and Off. When the diode is in the On state, current flows from the contact point to the N-type semiconductor material and is then conducted across the insulation layer; when the diode is in the Off state, current is blocked by the insulation layer. Due to this architecture, the S3DHM6G can be used as an effective switching element in small-signal circuits.
The S3DHM6G\'s fast switching and low forward voltage characteristics are mainly the result of its high power density, low capacitance and small junction capacitance. The diode\'s power density property is due to its low-cost and low-power manufacturing techniques, as well as its compact packaging. Its low capacitance also contributes to its fast switching capabilities, as the diode can swiftly adjust to changes in load currents. The small junction capacitance plays an important role too, since by keeping the voltage drop at the junction low, it alleviates the effects of the diode\'s parasitic capacitance.
The S3DHM6G can be used in a wide variety of applications, such as those mentioned earlier. In return circuits for instance, this diode is often used as a switch since the fast switching ensures that the desired signal is rapidly restored after the switch is turned off. Moreover, due to its low capacitance, the S3DHM6G can accurately track the input signal, allowing it to be used in AGC and radio tuning circuits. These are just a few of its many applications.
In conclusion, the S3DHM6G is a useful diode rectifier single with a wide range of applications, ranging from return circuits to AGC and radio tuning circuits. Its fast switching and low forward voltage capabilities, combined with its low power density and low capacitance, make it an ideal device for switching in small-signal circuits. As such, this diode has proven itself to be an invaluable tool for many engineers and technicians.
The specific data is subject to PDF, and the above content is for reference
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