Allicdata Part #: | S3GBM4G-ND |
Manufacturer Part#: |
S3GB M4G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 3A DO214AA |
More Detail: | Diode Standard 400V 3A Surface Mount DO-214AA (SMB... |
DataSheet: | S3GB M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06039 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Diodes - Rectifiers - Single
The S3GB M4G is an advanced rectifier circuitry that is used in a variety of applications. It is a single-phase, four-junction rectifier with a comprehensive range of performance characteristics. This device is a great tool for controlling electrical current and provides superior performance and reliability.The S3GB M4G is a low-voltage, low-current rectifier, and operates at up to 1450 V. It also features a low total harmonic distortion of less than 0.4% and a high power factor of better than 0.8. Additionally, the device has a very low forward bias voltage and a high switching frequency that make it suitable for a wide variety of applications.The S3GB M4G is designed to provide increased power efficiency and reliability in the most demanding applications. It is specifically designed to be used in high-precision, extreme-temperature and transient conditions and is also suitable for high-frequency switching applications. It can also be used in applications such as motor control, UPS, and emergency lighting.The S3GB M4G working principle is based on the principles of a typical four-junction rectifier circuit. The device consists of four main components - the gate, rectifier diodes, gate drive circuit and gate protection. The gate consists of an insulated gate bipolar transistor (IGBT) with a built-in rectifier diode. The gate drive circuit is responsible for controlling the process of supplying the full current and voltage needed for the rectifier, and the gate protection is responsible for protecting the device from damaging effects of over voltage and current.The S3GB M4G device utilizes advanced control algorithms in order to provide maximum power efficiency and control. The device is capable of providing precise voltage and current control with minimal ripple. This feature enables the device to be used in applications that require precise voltage and current control, as well as precise control of transient conditions. Generally, the S3GB M4G utilizes a four voltage technique to reduce the peak voltage. By adjusting the source signal, the device can accurately control the output current and voltage in order to meet the requirements of the application.The S3GB M4G offers several advantages over traditional devices, such as improved efficiency and reliability, a higher power factor and a higher quality power factor. Additionally, the device is designed to increase the life of other rectifiers. Additionally, the device is designed to reduce installation time and cost.Overall, the S3GB M4G is an excellent choice for applications where precise voltage and current control is needed. The device is highly reliable and provides superior efficiency and performance. Additionally, the device is versatile and can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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