
Allicdata Part #: | S3JBHM4G-ND |
Manufacturer Part#: |
S3JBHM4G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 3A DO214AA |
More Detail: | Diode Standard 600V 3A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.06039 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Diodes - Rectifiers - Single: S3JBHM4G Application Field and Working Principle
S3JBHM4G is a single, ultrafast recovery diode in an SMA package which provides an extremely low leakage, allowing for optimal efficiency and recovery performance at high temperatures. The diode is suitable for a wide range of power switch-mode power supplies (SMPS) and rectifier applications, including motor drive circuits, AC-DC converters and bridges, LED lighting and dimming systems, and automotive power electronics. The S3JBHM4G is capable of delivering a lower reverse leakage current due to its ultrafast recovery times and improved junction temperature ratings. This diode can operate up to temperatures of 175°C while maintaining its low leakage value. The Tjmax rating of this diode is also increased to 175°C, making it one of the most reliable ultrafast recovery diodes available on the market. The S3JBHM4G provides ultrafast reverse recovery times, with trr values as low as 10ns. This allows for unprecedented levels of efficiency and power savings in a variety of switch-mode power supplies and other rectifier applications. It has a reverse recovery charge (Qrr) of only 2.5nC, allowing for higher efficiency and improved power loss ratings when used in circuits.This diode also features a soft-turn off characteristic over current performance, which minimizes voltage overshoot and improves EMI performance. This allows for better system stability and enhanced power savings due to reduced power losses. The S3JBHM4G is RoHS compliant, making it an ideal choice for applications in various industrial, automotive and consumer electronics applications. In addition to its performance features, the S3JBHM4G also provides enhanced physical protection with an over-current standoff voltage of 400V and a reverse voltage of 1000V. It also has a maximum capacitance of 5.0nF and a reverse leakage current of less than 15nA at 175°C. The S3JBHM4G is designed to provide ultrafast recovery times, low leakage current and improved junction temperatures, making it one of the most reliable ultrafast recovery diodes available. With its improved thermal characteristics, it is an ideal choice for a wide range of rectifier applications, particularly those in industrial, automotive and consumer electronics markets. It is also ideal for applications in motor drive circuits, AC-DC converters and bridges, LED lighting and dimming systems, and high power switch-mode power supplies.
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