Allicdata Part #: | S40410081B1B2I000-ND |
Manufacturer Part#: |
S40410081B1B2I000 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 8G PARALLEL 100LBGA |
More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 200MH... |
DataSheet: | S40410081B1B2I000 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | e.MMC 1B1 |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 8Gb (1G x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LBGA |
Supplier Device Package: | 100-LBGA (14x18) |
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Memory as a fundamental component of computer systems, has played an essential role in the data processing in modern days. As the development of technology, semiconductor technology has been brought into much wider application fields, so S40410081B1B2I000 memory which is a developed version of semiconductor RAM and ROM memory has been applied in many computer systems. This kind of memory and potential applications will be explained in this article.
Overview
S40410081B1B2I000 memory, is an advanced version of SRAM and DRAM (Dynamic Read-Only Memory), developed by the semiconductor technology, which has the similar feature to that of SRAM, that is, it need not refresh current value of the memory after power failure or overheating, while introducing the same access mechanism to that of DRAM. The major difference between SRAM and S40410081B1B2I000 memory, as known, lies in that that the memory cells of S40410081B1B2I000 memory is smaller, thus it is able to be built with higher densities. As a result of this feature, S40410081B1B2I000 memory shows great difference from the traditional memory, and thus put forward more potential usages.
Application fields
S40410081B1B2I000 memory has applications in multiple fields. In the field of operating system, it can largely accelerate the process of operating system, and thus improving the system\'s performance. As a kind of internal memory, it has the high speed access, and large capacity built-in, which are the essential parts while providing users with a smooth operation experience. It can also be used to save the current status of a system in specific period, so as to realize the low-power operation and reduce the power consumption of overall system.
In communication field, S40410081B1B2I000 memory plays an important role as memory components of wireless networks. As known, wireless network transmit data at high frequency but with low energy consumptions. With the feature of S40410081B1B2I000 memory that supports power saving, data from wireless networks can be quickly stored and accessed, which increases the speed of data transmission and saves energy of networks. In addition, S40410081B1B2I000 memory can also be used for storage and reduction of data in real-time communication.
Apart from communication and operating system, S40410081B1B2I000 can also be used in display device such as computer monitors and smartphones. With the features of high speed access and low power consumption, S40410081B1B2I000 memory can act as a high-speed memory port to store multiple frames of data, and provide a smoother experience while display devices are switched or adjusted.
Working principle
The working principle of S40410081B1B2I000 memory is mainly based on the characteristic of semiconductor device. In brief, data is stored in the tiny cells of S40410081B1B2I000 memory, and a controller is used to control the access to the address of these cells. For example, when a cell is to be read, the controller is used to control the address which permits this process.
In addition to the feature of controlling the access to the address, S40410081B1B2I000 memory also introduces the technique of self-refreshing. Self-refreshing is the process where some of the cells in the memory is used to refresh the content in other cells. With the help of this process, any cells in the memory which are not accessed in a period of time can be automatically refreshed, and thus the accuracy of memory can be ensured.
As a result of self-refreshing process, it is possible for S40410081B1B2I000 memory to keep it running in specific environment, e.g. overheating or power cut down. In this case, it will not lose the content stored in memory, but the data will remain the same before the power or temperature is normalized.
Conclusion
Unlike the traditional memory, S40410081B1B2I000 semiconductor memory has the features of small cell size and self-refreshing, and is capable of storing and providing data with high speed and low power consumption. Since the introduction of this memory, it has been applied in multiple fields such as operating systems, wireless networks, display devices with great success. The working principle of this kind of memory is mainly based on controlling address access and self-refreshing, which largely increases the reliability of the data stored in memory, and enable it to boost system performance of various applications.
The specific data is subject to PDF, and the above content is for reference
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