S40410161B1B2W013 Allicdata Electronics
Allicdata Part #:

S40410161B1B2W013-ND

Manufacturer Part#:

S40410161B1B2W013

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 16G PARALLEL 100LBGA
More Detail: FLASH - NAND Memory IC 16Gb (2G x 8) Parallel 200M...
DataSheet: S40410161B1B2W013 datasheetS40410161B1B2W013 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: e.MMC 1B1
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)
Description

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The S40410161B1B2W013 is a type of memory technology. It is used by a wide range of electronic devices to store and recall data, allowing the device to remember and operate correctly. It was originally designed to be used in computers, but it is now used in many other electronic applications as well. This article will discuss the application field and working principle of the S40410161B1B2W013.

Application Field:

The S40410161B1B2W013 is a type of non-volatile memory, which means that it does not require power to maintain its stored information. This makes it suitable for a range of applications in consumer electronics, computer networking, medical equipment, embedded systems, and video game systems. It is often used in the manufacture of semiconductor chips, as its small size makes it ideal for use in small form factor chips. It is also used in vehicle ECU\'s, where it is used to store important data that needs to be preserved after the engine is switched off. The S40410161B1B2W013 is also commonly used in satellite phones, digital cameras, and other digital communication devices.

Working Principle:

The working principle of the S40410161B1B2W013 is based on an electrically erasable programmable read-only memory (EEPROM) technology. It is integrated into the device’s architecture and is made up of cells that store bits of data. The device utilizes a set of floating gates with electrical contacts to allow the bits of data to be stored and retrieved. The cells that make up the device are arranged in an array, where each cell can store a single bit of data. The device normally stores 8 bits per cell and can store up to 32 kilobytes of data.

The S40410161B1B2W013 is normally used in serial read and program mode, where each cell is read and written one bit at a time. A clock signal is used to synchronize the data transfer and an additional line is used to "enable" the write operation. The writing process starts by setting the enable line low, which will enable the write enable transistor. Once the enable line is activated, a write signal is sent to the appropriate cell, which will set the desired bit. The bit can then be written by applying a voltage to the cell, thus setting the bit to its desired value. When the process is complete, the enable line is set to high and the writing process is stopped.

The S40410161B1B2W013 is a versatile type of memory that is used in a wide range of applications. Its non-volatile nature makes it ideal for storing important data that needs to be retained even when the power is off. Its small size makes it ideal for use in small form factor chips, while its robust design makes it suitable for use in a range of other applications as well.

The specific data is subject to PDF, and the above content is for reference

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