Allicdata Part #: | S40DRGN-ND |
Manufacturer Part#: |
S40DR |
Price: | $ 3.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 200V 40A DO5 |
More Detail: | Diode Standard, Reverse Polarity 200V 40A Chassis,... |
DataSheet: | S40DR Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.30788 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 40A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 190°C |
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Silicon Carbide Schottky Diodes (S40DR) are diodes which have been developed to meet industrial as well as consumer demand, and are able to operate at extreme temperatures and higher voltage conditions, compared to traditional silicon diodes. This new type of diode technology has several advantages over its silicon counterparts, such as a lower forward voltage drop, higher current handling capability and higher switching speeds. The S40DR has a maximum reverse current of 40A, and a maximum reverse voltage of 70V DC. It has a high current handling capability, low resistance heating and high reliability.
The S40DR is most commonly used in the audio, television, and radio industries. It can be used for a wide range of applications, including signal amplification, detection and modulation, power conversion, protection circuits, and speed control. As well, the S40DR can be used in the appliance and automotive industries.
The main advantage of the S40DR is its ability to withstand higher temperatures and high voltages. It can handle temperatures up to 175°C and voltages up to 100V. This means that it can act as a fast switching regulator for high power RF and switching applications, allowing for a smaller footprint and efficient power conversion.
The working principle of the S40DR is based on the Schottky effect in which an electric field is created between a metal and a semiconductor, resulting in a much lower forward voltage than with a conventional diode. This phenomenon is also known as the Barrier Effect and is used to construct barriers that both suppress and control current flow. The S40DR uses this effect to influence the current flow in order to provide fast switching capability. The barrier also serves to provide a high proportion of device breakdown voltage.
The S40DR follows a similar circuit design as other Schottky diodes, but adds an integrated heat sink which helps to dissipate heat generated by the diode during operation. This helps to lower temperatures, reduce power consumption, and improve the overall efficiency of the device. The design also ensures that the S40DR can withstand vibration, shock and heat to a certain degree.
To sum up, the S40DR is an advanced type of diode technology which has been developed to meet industrial and consumer demand. It offers a wide range of applications, such as signal amplification, detection and modulation, power conversion, protection circuits and speed control. Furthermore, the S40DR has the ability to withstand higher temperatures and voltages, making it ideal for high power RF and switching applications. Lastly, the integrated heat sink helps to dissipate heat, ensuring the S40DR is highly reliable and efficient.
The specific data is subject to PDF, and the above content is for reference
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