Allicdata Part #: | S4MV6G-ND |
Manufacturer Part#: |
S4M V6G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 4A DO214AB |
More Detail: | Diode Standard 4A Surface Mount DO-214AB (SMC) |
DataSheet: | S4M V6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06730 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 100µA @ 1000V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S4M V6G Application Field and Working Principle
The S4M V6G is a high-frequency single rectifier diode that operates in both forward and reverse order, offering an efficient and versatile solution for a broad range of applications. This diode can be used in automotive, home and office electronics, consumer electronic products, and more.
In forward operation, the S4M V6G can be used for switching power supplies, as rectified paths for power and signal, and as current rectification for pulse application. It also offers soft recovery and fast switching times. In reverse operation, it can be used as an output diode in SMPS, and can also function as a low-noise voltage source, as well as an ESD protection device.
The S4M V6G\'s working principle is based on the theory of rectification - electricity passes through the diode in only one direction, and the amplitude of the electrical current is reduced to one wave per cycle. This process is accomplished through the physical properties of a diode, which consists of two p-n junction diodes connected in reverse parallel. When current passes through the diode, it is forced across the junction, resulting in a voltage drop. This voltage drop is called the forward voltage drop, and it is what allows current to flow in one direction.
The S4M V6G is composed of both a p-type and n-type layers which are connected in parallel, creating a junction. When an applied voltage is higher than the threshold voltage, known as the built-in junction barrier voltage, the current flows through the diode, and is referred to as forward bias current. When the applied voltage is lower than the threshold voltage, the reverse bias current results, resulting in the diode acting as a current resistant. This principle is used to control the current through a diode and regulate the voltage levels.
In applications where the S4M V6G is used as a rectifier, the rectifying current is generated by the forward-biased junction of the diode. This current is generated by essentially forcing electrons through the junction, resulting in a voltage drop. In addition, the S4M V6G\'s fast switching time and low forward voltage drop make it ideal for high-speed, high-power applications. It is also uniquely designed to reduce component stresses and switching losses.
The S4M V6G is durable, highly efficient, and can be used in many different applications. It offers a low forward voltage drop and fast switching times, making it well-suited for high-speed, high-power applications. It can also be used as an ESD protection device, low-noise voltage source, or as a rectifying path for power and signal.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
S4M V7G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 1KV 4A DO2... |
S4M R7G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 1KV 4A DO2... |
S4M | Semtech Corp... | 7.53 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
S4M V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 4A DO214AB... |
S4M M6G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 4A DO214AB... |
S4MF04207SPZQQ1 | Texas Instru... | -- | 1105 | IC MCU 32BIT 448KB FLASH ... |
S4MF06607BSPZQQ1 | Texas Instru... | -- | 1448 | IC MCU 32BIT 640KB FLASH ... |
S4MF03107SPZQQ1R | Texas Instru... | -- | 1000 | IC MCU 32BIT 320KB FLASH ... |
S4MF03107SPZQQ1 | Texas Instru... | 6.64 $ | 924 | IC MCU 32BIT 320KB FLASH ... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...