Allicdata Part #: | S4PGHM3/86A-ND |
Manufacturer Part#: |
S4PGHM3/86A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 4A TO277A |
More Detail: | Diode Standard 400V 4A Surface Mount TO-277A (SMPC... |
DataSheet: | S4PGHM3/86A Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S4PG |
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The S4PGHM3/86A is a single rectifier diode produced by Toshiba. It is suitable for use in general rectification, free-wheeling and reverse voltage protection applications. It features low forward voltage drop due to the high-purity P-type silicon substrate and ultra low reverse leakage, making it an ideal choice for low power, pulsed applications.
The S4PGHM3/86A is packaged in a TO-220AB plastic package, which makes it suitable for use in a variety of applications, including DC-to-DC converters, automotive and industrial power supplies, and general electronic equipment. The body of the package is made from flame retardant plastic, and it is designed to dissipate heat quickly and evenly to ensure the diode operates within its specified parameters. It also features an isolated slot on the side of the package to improve dissipation.
The S4PGHM3/86A has a highly reliable glass passivated junction and low thermal resistance for high temperature operation. Its low forward voltage drop and ultra low reverse leakage makes it a suitable choice for applications requiring efficient power conversion, and its reverse recovery time is generally faster than that of conventional rectifier diodes. The S4PGHM3/86A also features a low turn-on voltage and high surge capability for improved protection for sensitive components.
The working principle of the S4PGHM3/86A is based on the passage of electric current through a semiconductor material, usually a silicon wafer. When the device is in its forward bias state, electrons are attracted to the positive terminal and migrate through the positive substrate, passing into the diode’s negative substrate, giving out energy in the form of heat. The reverse bias state sees the same electrons passing back through the negative substrate, but the diode provides a high resistance in this direction. The forward voltage drop is determined by the resistance in the forward direction, while the reverse leakage current is determined by the resistance in the reverse direction.
The S4PGHM3/86A is suitable for use in a variety of applications, including power supplies and DC-to-DC converters, power factor correction and power management, solar cell and LED illuminating light fixtures, as well as lighting ballasts, and automotive and industrial equipment.
The S4PGHM3/86A is a reliable and cost efficient device that is suitable for use in a wide range of applications requiring efficient power conversion, protection from reverse voltage and high-volume pulsed current operation. Its low forward voltage drop and ultra low reverse leakage make it an ideal choice for low-power, pulsed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S4PGHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 4A TO... |
S4PGHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 4A TO... |
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