Allicdata Part #: | S4PKHM3_A/I-ND |
Manufacturer Part#: |
S4PKHM3_A/I |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 4A TO277A |
More Detail: | Diode Standard 800V 4A Surface Mount TO-277A (SMPC... |
DataSheet: | S4PKHM3_A/I Datasheet/PDF |
Quantity: | 1000 |
6500 +: | $ 0.11510 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S4PKHM3_A/I is a diode, which belongs to the type of rectifiers known as single. The main use of this kind of component is related to the process of converting AC voltage into DC voltage, usually by power supplies. The S4PKHM3_A/I, however, stands out due to its high-performance specifications, such as its low capacitance of 47 pF, low reverse recovery time of 25 ns, and its high surge current of 315 A. These features make it suitable for applications that require efficient use of power or involve very high operating frequencies, such as in RF modules or high-performance computing architectures
Let\'s look at the application field of the S4PKHM3_A/I, and its working principle, in detail:
Application Field
The S4PKHM3_A/I is suitable for several types of applications, some of the most common are:
- Power Supplies: Because of its low capacitance, low recovery time, and high surge current, the S4PKHM3_A/I is perfect for the use in high-efficiency, high-frequency switching power supplies. It allows for more accurate voltage conversion and less energy wastage.
- RF Modules: Its fast switching capabilities make it excellent for use in radio frequency (RF) modules and integrated circuits, eliminating unwanted electromagnetic interference.
- High Performance Computing: Its low capacitance and fast switching times make it extremely well-suited for high-performance computing applications, improving the overall response time of computers.
Working Principle
The S4PKHM3_A/I operates by using a basic diode operation. It is a two-terminal device that consists of two doped semiconductor regions, the anode and the cathode. It allows electric current to flow freely in one direction, while blocking any current flow in the opposite direction. This is due to the P-N junction of the two doped semiconductor regions, which creates a potential barrier. The current can flow only if the voltage applied at the anode is higher than the voltage at the cathode.
Switching occurs when the voltage at the anode is less than the voltage at the cathode and the electric current stops flowing. The speed of the switching is dependent on the capacitance of the diode, which is why the S4PKHM3_A/I has such low capacitance and fast switching times. The reverse recovery time, which is the amount of time it takes for the diode to recover its blocking state, is also improved by its low capacitance.
Finally, the surge current of the S4PKHM3_A/I is higher than that of most other diodes, making it more suitable for use in applications with higher power requirements. This, in combination with its other features, make it an ideal choice for several types of applications, as we saw in the applications field section.
In conclusion, the S4PKHM3_A/I is a high-performance diode, belonging to the type of rectifiers known as single. Its main purpose is to convert AC voltage into DC voltage. It stands out due to its low capacitance, reverse recovery time, and high surge current. This makes it suitable for power supplies, RF modules and high-performance computing applications. Its operation relies on the P-N junction of two doped semiconductors, allowing electric capacity to flow in one direction. The speed of switching is determined by its low capacitance and fast recovery time, as well as its high surge current. All these features make it suitable for several types of applications.
The specific data is subject to PDF, and the above content is for reference
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