S5BHE3_A/I Allicdata Electronics
Allicdata Part #:

S5BHE3_A/I-ND

Manufacturer Part#:

S5BHE3_A/I

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 5A DO214AB
More Detail: Diode Standard 100V 5A Surface Mount DO-214AB (SMC...
DataSheet: S5BHE3_A/I datasheetS5BHE3_A/I Datasheet/PDF
Quantity: 1000
3500 +: $ 0.12304
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S5B
Description

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The S5BHE3_A/I is a single rectifier diode intended for use in the rectification of medium voltage direct current (MV-DC) applications. It is generally used in rectifiers, chargers, and motor control power supplies, which require high reliability, high efficiency, and low noise performance. These diodes are an intermediate voltage-class rectifier, meaning that they are capable of handling medium--but not high--voltage DC currents.

The S5BHE3_A/I is configured in a half-bridge configuration, with two diodes connected in series to a positive and a negative DC voltage source. This configuration increases the voltage rating of the diode, allowing it to be used to handle medium voltage currents of up to 600 volts. The diode also has a double-diffused construction, meaning that the dopants used in its structure diffuse into the adjacent layers, resulting in higher performance and greater efficiency.

The S5BHE3_A/I has a reverse-recovery time of only 5 µs, meaning the diode can respond with lightning-quick speed to the alternating current running through it. This ultra-fast switching speed contributes to its high efficiency, as it minimizes power loss due to the current being switched. It also has a low forward voltage drop of only 1.4V, which lowers electrical power losses further.

The diode package is designed to minimize EMI, and it also features high temperature stability, up to a peak temperature of 150℃. These features give it an extra layer of high-reliability performance in applications where EMI and temperature are major concerns. In applications where the diode may come under elevated stress, the S5BHE3_A/I is also durable and robust in temperature spikes, both in the rated conditions and in high-performance conditions.

Overall, the S5BHE3_A/I is a reliable, efficient, and high-performance diode for medium voltage DC applications. Its features make it suitable for use in rectifiers, powers supplies, and motor controllers, where its lightning-fast switching speed, low power losses, and high temperature performance will prove highly valuable. Furthermore, its additional EMI-minimizing package provides a critical layer of reliability for applications that require high-efficiency operation.

The specific data is subject to PDF, and the above content is for reference

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