S5GHE3/9AT Discrete Semiconductor Products |
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Allicdata Part #: | S5GHE3/9ATGITR-ND |
Manufacturer Part#: |
S5GHE3/9AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 5A DO214AB |
More Detail: | Diode Standard 400V 5A Surface Mount DO-214AB (SMC... |
DataSheet: | S5GHE3/9AT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | S5G |
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Diodes are small semiconductor devices that are commonly used to control the flow of electricity in a variety of different applications. A rectifier is a type of diode that allows only one-way current flow while blocking the other direction. Single rectifiers consist of just one diode, while multiple rectifiers are made up of several diodes wired in series to provide a more robust solution. The S5GHE3/9AT is a single rectifier that features high efficiency, fast switching speeds, and a low forward voltage drop. In this article, we will explore the application fields and working principle of this device.
Application Fields
The insulated-gate bipolar transistor (IGBT) is a three-terminal device which can be used in many power electronics and motor control applications. The S5GHE3/9AT is a popular choice for this type of application because of its low forward voltage drop, fast switching speeds, and high efficiency. This makes it ideal for use in high-power applications, such as motor controllers, inverters, and power supplies. Additionally, these devices can be used to provide overvoltage protection, ESD protection, and reverse voltage protection in a variety of circuits.
Working Principle
The primary function of a rectifier diode is to allow current flow in one direction while blocking the other direction. The S5GHE3/9AT is capable of this due to its asymmetric design. It consists of two layers of differently-doped semiconductor material, called the anode and the cathode. When the anode is positive with respect to the cathode, a reverse bias is applied, causing the diode to become reversely-biased and thus blocking current flow. However, when the anode is negative with respect to the cathode, the diode is forwardly-biased, allowing current flow. The S5GHE3/9AT has a low forward voltage drop and fast switching speeds, which makes it ideal for high-power applications.
Conclusion
The S5GHE3/9AT is a single rectifier device that offers high efficiency, fast switching speeds, and a low forward voltage drop. It is commonly used in IGBT applications, such as motor controllers, inverters, and power supplies, as well as for overvoltage protection, ESD protection, and reverse voltage protection. This is due to its asymmetrical structure, which allows current to flow in one direction while blocking current flow in the opposite direction. Ultimately, it is an excellent choice for a variety of power electronics and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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S5GHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 5A DO... |
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