S5JL-TP Discrete Semiconductor Products

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Diodes - Rectifiers - Single, representing an innovative and leading solution for high voltage applications, is the ideal choice for high power applications such as wind and solar power generation. Specifically developed for industrial applications, the S5JL-TP datar is the most advanced solution for high voltage AC/DC and DC/DC converters that requires fast and cost-effective delivery.S5JL-TP is a ultra fast, low forward voltage drop semiconductor Schottky rectifier, capable of 100V forward voltage blocking. It is designed to provide superior performance in high frequency applications. With superior surge capability, S5JL-TP is well-suited for applications where high power, high surge capability, and high frequency capabilities are needed.The S5JL-TP has an integrated junction-to-case thermal resistance of 45m°C/W, allowing it to dissipate a large amount of heat within a slim and efficient package. The superior performance of the S5JL-TP makes it an excellent choice for applications such as LED lightning, LED lighting drivers, HID light ballasts, switching power supplies, industrial rectifiers, and home appliances.The S5JL-TP has a forward voltage of 0.68V, ensuring that it is capable of delivering exceptional efficiency even in high power applications. The ultra fast turn-off times and recovery speeds of S5JL-TP allow for high frequency correction, enabling it to provide superior energy efficiency and system reliability. The low VF and ultra short reverse recovery times make it ideal for high current switching and reduction of power losses.The working principle of S5JL-TP is based on a Schottky rectifier. When forward biased, an electric charge passes from the anode (positive terminal) to the cathode (negative terminal) through the active region of the diode and is partially blocked, creating a voltage drop across the diode. When reverse biased, the diode blocks the electric charge, preventing it from passing and creating a high resistance barrier.The active region, or Schottky barrier, of the diode is formed at the interface of the metal electrode and the semiconductor substrate. The electric charge carrier passes through this region, and the direction of the current flow is determined by the voltage polarity. The Schottky barrier facilitates the majority current flow and suppresses minority current flow, thus protecting the device from reverse breakdown.The S5JL-TP also uses a clamping structure that increases the forward voltage blocking of the diode and provides an easier path for majority carriers to flow. This structure is designed to reduce the reverse recovery time and minimize switching losses. In instances of high forward voltage, the clamping structure reduces the current flowing through the rectifying junction, protecting it from damage.In summary, the S5JL-TP diode is an ultra-fast, low forward voltage drop semiconductor Schottky rectifier designed for applications requiring high power and high frequency capabilities. Its integrated junction-to-case thermal resistance allows for improved heat dissipation, while its clamping structure increases the forward voltage blocking of the diode and reduces switching losses. With superior surge capability, low VF, and ultra-short reverse recovery times, the S5JL-TP is the ideal choice for high voltage applications.

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