Allicdata Part #: | S5MM6G-ND |
Manufacturer Part#: |
S5M M6G |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 5A DO214AB |
More Detail: | Diode Standard 5A Surface Mount DO-214AB (SMC) |
DataSheet: | S5M M6G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.10774 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 10µA @ 1000V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The S5M and M6G diodes are precision rectifiers that offer high performance in various applications. These devices are available in both single- and dual-rectifier configurations and can be used in circuits requiring fast response and reliable power conversion.
The S5M and M6G are suitable for use in a wide range of applications such as power converters, motor drives, UPS systems, and solar/wind power systems. They feature low forward voltage drop, low reverse leakage current, and high maximum blocking voltage. Additionally, their high current capability allows them to handle high power loads with minimal power loss.
In terms of working principle, the S5M and M6G rectifiers operate similarly to the traditional diode-bridge rectifiers. These devices are made up of two or four diodes arranged in a half-wave or full-wave rectifier circuit. The diodes allow current to flow in one direction, while blocking current in the opposite direction.
The devices also have an integrated fast-recovery capability, which reduces the devices\' voltage spike and ensures a smooth current flow. This feature makes these devices suitable for use in applications that require low EMI, such as communication devices and computer equipment.
The S5M and M6G are also designed to withstand thermal shock and vibration, ensuring their long-term reliability. Furthermore, their hermetically sealed package prevents contamination and corrosion and helps to maintain their high performance in extreme environments.
Overall, the S5M and M6G diodes offer a robust solution for a wide range of applications. They are available in various sizes and configurations, and their fast-recovery capability ensures a reliable power conversion. Additionally, their hermetically sealed package ensures their long-term operation in harsh environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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S5M V7G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 1KV 5A DO2... |
S5M R7G | Taiwan Semic... | 0.13 $ | 850 | DIODE GEN PURP 1KV 5A DO2... |
S5MHE3_A/I | Vishay Semic... | 0.14 $ | 1000 | DIODE GEN PURP 1KV 5A DO2... |
S5MHE3_A/H | Vishay Semic... | 0.2 $ | 1000 | DIODE GEN PURP 1KV 5A DO2... |
S5M-E3/57T | Vishay Semic... | -- | 20400 | DIODE GEN PURP 1KV 5A DO2... |
S5MC-13-F | Diodes Incor... | -- | 15000 | DIODE GEN PURP 1KV 5A SMC... |
S5M-E3/9AT | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 1KV 5A DO2... |
S5MCTR | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 5A SMC... |
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S5MBHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 5A DO214AA... |
S5MBHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 5A DO214AA... |
S5M V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 5A DO214AB... |
S5MS-E3/9AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GP 1KV 1.6A DO214AB... |
S5M-M3/9AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 5A 1000V DO-214... |
S5MS-M3/9AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GP 1KV 1.6A DO214AB... |
S5M-M3/57T | Vishay Semic... | 0.1 $ | 1000 | DIODE GPP 5A 1000V DO-214... |
S5MS-M3/57T | Vishay Semic... | 0.1 $ | 1000 | DIODE GP 1KV 1.6A DO214AB... |
S5MS-E3/57T | Vishay Semic... | 0.11 $ | 1000 | DIODE GP 1KV 1.6A DO214AB... |
S5M M6G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 5A DO214AB... |
FZ-S5M2 | Omron Automa... | 3.47 $ | 1000 | IMAGING CAMERA CHASSIS MO... |
FJ-S5MG | Omron Automa... | 4.16 $ | 1000 | IMAGING CAMERA CHASSIS MO... |
FJ-S5MG-S | Omron Automa... | 4.85 $ | 1000 | IMAGING CAMERA CHASSIS MO... |
S5MHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 5A DO2... |
S5MHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 5A DO2... |
S5MC-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 1KV 5A SMC... |
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