S6006LS2

Series:	--
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Voltage - Off State:	600V
Voltage - Gate Trigger (Vgt) (Max):	800mV
Current - Gate Trigger (Igt) (Max):	200µA
Voltage - On State (Vtm) (Max):	1.6V
Current - On State (It (AV)) (Max):	3.8A
Current - On State (It (RMS)) (Max):	6A
Current - Hold (Ih) (Max):	6mA
Current - Off State (Max):	5µA
Current - Non Rep. Surge 50, 60Hz (Itsm):	83A, 100A
SCR Type:	Sensitive Gate
Operating Temperature:	-40°C ~ 110°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Isolated Tab
Supplier Device Package:	TO-220 Isolated Tab

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Thyristors - SCRsA Silicon Controlled Rectifier (SCR) is a type of a semiconductor device, more specifically a 4-layer diode, used in industrial electronics and other fields of electronics. It’s a device that can be used for a variety of applications ranging from controlling large amounts of power in high power applications to controlling small amounts of power in low power applications. The S6006LS2 SCR is a particular type of SCR that is widely used in these different types of applications. This article will discuss the S6006LS2 SCR and its application fields, as well as provide a comprehensive description of its working principle.The S6006LS2 is a semiconductor device engineered by the STMicroelectronics Company that is designed primarily for the purpose of controlling high power in industrial applications such as motor control, heating, welding, and lighting, among others. It’s designed specifically to give a high power to current output ratio so that it can adequately handle large amounts of current without generating too much heat and dissipating it from the device. In addition to its high power capability, it also has a very low on-state voltage drop, making it highly efficient in terms of power output.The S6006LS2 is made up of an N-type and a P-type layer, with a P-type layer between them. The P-type layer has an anode at one end and a cathode at the other. When a current passes through the N-type layer from the cathode to the anode, it creates an N-type field. This helps to create a junction between the N-type layer and the P-type layer in which electrons can flow, thus forming an SCR.The S6006LS2 SCR works in the same way as most other SCRs. When a forward current is applied to the anode, the P-type layer creates a “transmission gate” between the N-type and P-type layers, allowing for electrons to pass through. This creates a flow of current in a single direction from the anode to the cathode, acting as an electrical switch. This forward current can be switched off by applying a reverse current or by removing the forward current.The S6006LS2 SCR is designed to be very efficient in controlling the high power circuits it is specifically designed for, such as motor control and lighting. It is also designed with a very low on-state voltage drop, making it especially efficient in terms of power output. Additionally, it has a very high surge current capability. This allows it to handle very large currents on short duration, making it ideal for applications such as motor control.In conclusion, the S6006LS2 SCR is a semiconductor device designed primarily for the purpose of controlling high power applications, making it an effective device for motor control, lighting, and other applications. It is composed of an N-type and a P-type layer, with an anode at one end and a cathode at the other. When a forward current is applied to the anode, the P-type layer creates a junction where electrons can flow, thus forming an SCR. The S6006LS2 has a very low on-state voltage drop and is capable of handling very large currents on short duration, making it ideal for industrial applications.

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