Allicdata Part #: | S6KRGN-ND |
Manufacturer Part#: |
S6KR |
Price: | $ 3.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 800V 6A DO4 |
More Detail: | Diode Standard, Reverse Polarity 800V 6A Chassis, ... |
DataSheet: | S6KR Datasheet/PDF |
Quantity: | 1000 |
200 +: | $ 3.08454 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Single-phase and three-phase rectifier circuits are widely used in many industrial and commercial applications, such as AC–DC converters, UPS systems, motor control, and various power supply circuits. Traditional silicon diodes are generally used as the rectifier elements in these circuits. With the development of power electronics industry, high-power rectifiers using power semiconductor devices such as Silicon Control Rectifiers (SCRs), Insulated Gate Bipolar Transistors (IGBTs), and MOS Controlled Thyristors (MCTs) are now often used in high-power rectifier systems.
S6KR, the latest high-voltage rectifier diode from the company INCI, combines a low on-voltage and high-speed switching performance in a single package. The device is designed for high current rectification applications up to 1700 V. This device features trench-gate technology and ultra-fast switching speed, making it an ideal choice for high-power rectifier systems.
The S6KR device is constructed of multiple layers of alternating P+ and N+ doped silicon. These layers are connected in series to form the rectifier bridge. The N+ and P+ layers are formed in a trench-gate structure which gives the device its fast switching speed. The anode and cathode connections are made to the ends of the bridge and the gate connection is made to the center of the bridge where the trench-gate structure is located. This structure results in fast switching speed and low on-voltage when compared to traditional silicon diodes. It also allows better control of heat transfer in the device.
The working principle of the S6KR rectifier diode is based on the principle of rectification. When a positive voltage is applied to the anode and a negative voltage is applied to the cathode, current flows through the rectifier bridge. This current is either in the form of a direct current (DC) or alternating current (AC), depending on the application. When the current is AC, it is rectified by the diode and converted into a DC current.
In addition to its rectification function, the S6KR device also has other applications, such as protection against over-voltage and over-current. Its built in protection feature protects the device and other components connected to it from damage due to overloads or short circuit conditions. The device also provides sense control in motor control applications.
The S6KR high-voltage rectifier diode is a great addition to power semiconductor devices used in high-power rectifier systems. Its low on-voltage and high-speed switching performance provide increased efficiency and reliability, making it an ideal choice for many rectifier applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S6KR | GeneSiC Semi... | 3.43 $ | 1000 | DIODE GEN PURP REV 800V 6... |
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