Allicdata Part #: | S6MRGN-ND |
Manufacturer Part#: |
S6MR |
Price: | $ 3.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 1KV 6A DO4 |
More Detail: | Diode Standard, Reverse Polarity 1000V 6A Chassis,... |
DataSheet: | S6MR Datasheet/PDF |
Quantity: | 1000 |
200 +: | $ 3.47013 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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S6MR is an ultra-fast rectifier group consisting of single components made of silicon controlled chips. It is designed to be capable of handling high speeds, low voltage and low-temperature applications in high-reliability and high-performance applications. In fact, it is a specialized diode with a very low recovery time. It offers superior performance over other diodes and is useful in a wide range of applications.
The fast switching time and low voltage drop of S6MR makes it suitable for use in a wide range of applications where power switch performance is critical. The low on-state voltage drop makes it the most efficient rectifier for power converters. For example, it is an ideal choice for applications that require high current handling capacity such as peak inverters, high speed switching power supplies and drive circuits.
In microcontroller and digital logic circuits, the fast switching speed of S6MR is also essential because it can provide pre-switched switching speeds, eliminating external components and reducing costs. It also provides lower switching losses compared to other rectifiers. In addition, the low reverse recovery time helps reduce noise generation.
The working principle of S6MR is based on a diode connected between two ports. The diode is an n-type semiconductor with a p-n junction. The current flow is determined by the voltage gradient across the junction. When the voltage drop across the junction increases, the current is increased and the reverse current is reduced. This helps to achieve fast switching speeds and low reverse recovery times.
The on-state characteristics of S6MR are determined by the design of the device, which consists of a closed switching terminal and a heat dissipating element. The closed switching terminal ensures fast switching speeds and the heat-dissipating element ensures the safe operation and superior performance of the device. The junction temperature must be maintained at a certain level to ensure safe and reliable operation.
In addition to being used in high-speed and low-voltage applications, S6MR is also capable of handling high temperatures, making it ideal for use in automotive, military and industrial applications. In these applications, the ability of the S6MR to operate up to a certain temperature range is essential. This ensures safe operation of the device and prevents overheating, which can cause losses in power conversion efficiency.
The S6MR has many advantages over other diodes, such as fast switching speed, high current handling capacity, low-voltage drops, and low reverse recovery time. These features make it ideal for applications that require high performance and reliability. This device is also well suited for applications where power switch performance is critical because of its low on-state voltage drop, high current handling capacity and fast switching time.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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S6MR | GeneSiC Semi... | 3.86 $ | 1000 | DIODE GEN PURP REV 1KV 6A... |
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