S71VS064RB0AHT4L3 Allicdata Electronics
Allicdata Part #:

S71VS064RB0AHT4L3-ND

Manufacturer Part#:

S71VS064RB0AHT4L3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH RAM 64MIT PAR 52VFRBGA
More Detail: FLASH, PSRAM Memory IC 64Mbit Flash, 64Mbit RAM Pa...
DataSheet: S71VS064RB0AHT4L3 datasheetS71VS064RB0AHT4L3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: VS-R
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, PSRAM
Memory Size: 64Mbit Flash, 64Mbit RAM
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-VFBGA
Supplier Device Package: 52-VFRBGA (6x5)
Description

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S71VS064RB0AHT4L3 is a type of non-volatile memory device from STMicroelectronics. It is a 16 Megabit SPI Serial Flash Memory which integrates a high-performance SPI Interface, an on-chip DC-DC Voltage Regulator and Security Lock feature. It offers reliable storage and retrieval at maximum transfer rate up to 104MHz and access time up to 125ns. This product is particularly well suited for automotive, industrial, and consumer applications.

The application field of S71VS064RB0AHT4L3 is quite varied. It is suitable for data storage and retrieving of system configuration, application code, and user data. It is particularly suitable for applications that require automotive grade products, such as powertrain and safety systems. In industrial application of Automation System, it is suitable for memories with critical sector data, operation logs, and other safety and security related activities. In consumer electronics, it can be used for storage of large video and audio files.

The working principle of S71VS064RB0AHT4L3 is similar to many other types of non-volatile memory. It is based on the charge storage phenomenon - floating gate transistor, also known as EEPROM or Flash memory. S71VS064RB0AHT4L3 uses a NAND or NOR-based memory cell array, consisting of one or more blocks of memory cells. Each memory cell consists of two transistors - a control gate transistor and a floating gate transistor. To read or write data, the control gate transistor is used to control current flow in the memory cell. When a high voltage is applied to the control gate, the current will flow between the two transistors, and data can be written or read from the floating gate.

S71VS064RB0AHT4L3 also comes with an on-chip DC-DC Voltage Regulator for adaptive voltage scaling. This allows the memory to be powered by a wide range of voltages, from 2.7V to 5.5V. The regulator dynamically adjusts the voltage of the memory cells according to the voltage supplied, allowing the device to sustain any expected operating conditions.

In addition, S71VS064RB0AHT4L3 also comes with a Security Lock feature. This feature will protect the contents of the memory against unauthorized read and write access. It is integrated into the memory array and prevents any external access to the memory cells. Consequently, the Security Lock ensures that data is kept secure and protected.

S71VS064RB0AHT4L3 is a versatile memory device for a variety of applications. It is suitable for automotive and industrial applications that require reliable data storage and retrieval in a wide range of voltage levels. Furthermore, its Security Lock feature also makes it suitable for applications that require high levels of data protection.

The specific data is subject to PDF, and the above content is for reference

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