Allicdata Part #: | S71VS256RD0AHK4L3-ND |
Manufacturer Part#: |
S71VS256RD0AHK4L3 |
Price: | $ 4.28 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH RAM 256MIT PARALLEL |
More Detail: | FLASH, PSRAM Memory IC 256Mbit Flash, 128Mbit RAM ... |
DataSheet: | S71VS256RD0AHK4L3 Datasheet/PDF |
Quantity: | 1000 |
2400 +: | $ 3.89535 |
Series: | VS-R |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH, PSRAM |
Memory Size: | 256Mbit Flash, 128Mbit RAM |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
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Memory is a fundamental component of all computing systems. It is used to store information and execute instructions. The S71VS256RD0AHK4L3 is a type of memory that is widely used in modern computing systems. This article will discuss the application field and working principle of the S71VS256RD0AHK4L3.
The S71VS256RD0AHK4L3 is a type of synchronous static random access memory (SSRAM). SSRAM is a type of memory that is used in many modern computing systems. It is a synchronous memory, meaning that it is synchronized to an external clock signal. This synchronous operation allows for faster access times than asynchronous memory.
The S71VS256RD0AHK4L3 can be used in a variety of applications. It is commonly used in embedded systems, such as storage devices, routers, and switches. It is also used in industrial automation, instrumentation, and aerospace applications. The S71VS256RD0AHK4L3 is also used in automotive applications, such as telematics and infotainment systems.
The S71VS256RD0AHK4L3 is powered by a low voltage (1.2V - 1.25V), low power (30mW/MHz) CMOS technology. This makes it ideal for low power embedded applications. It is also highly reliable, with a read/write endurance of 1 million cycles. The S71VS256RD0AHK4L3 is also highly dense, with a maximum capacity of 256Mbits.
The S71VS256RD0AHK4L3 uses a familiar synchronous static random access memory (SSRAM) architecture. It contains an array of addressable storage cells, which are arranged in a linear pattern. The data is then stored in the cells by manipulating their logic levels. The address of each storage cell is determined by an address decoder that receives an address bus from the memory controller. Once the address is decoded, the memory controller then sends a read or write signal to the memory cells to either read or write data.
The S71VS256RD0AHK4L3 also has several other features that make it a desirable choice for modern computing systems. It offers low latency, high throughput, and low power consumption. It is also highly reliable, with a read/write endurance of 1 million cycles and a data retention of 10 years. The S71VS256RD0AHK4L3 also has a unique, low-noise pin layout that makes it suitable for high-speed, high-density applications.
In conclusion, the S71VS256RD0AHK4L3 is a type of synchronous static random access memory (SSRAM) that is widely used in modern computing devices. It is used in a variety of embedded, industrial, and automotive applications. It is powered by a low voltage, low power CMOS technology. It also has several other features, such as low latency, high throughput, and low power consumption, that make it an attractive choice for computing systems. The S71VS256RD0AHK4L3 is an ideal choice for modern computing systems that require low power, high speed operation.
The specific data is subject to PDF, and the above content is for reference
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