S8006DRP Allicdata Electronics
Allicdata Part #:

S8006DTR-ND

Manufacturer Part#:

S8006DRP

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SCR NON-SENS 800V 6A TO-252AA
More Detail: SCR 800V 6A Standard Recovery Surface Mount TO-252...
DataSheet: S8006DRP datasheetS8006DRP Datasheet/PDF
Quantity: 1000
2500 +: $ 0.35606
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Current - On State (It (RMS)) (Max): 6A
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - Off State (Max): 10µA
Current - Hold (Ih) (Max): 30mA
Series: --
Current - On State (It (AV)) (Max): 3.8A
Voltage - On State (Vtm) (Max): 1.6V
Current - Gate Trigger (Igt) (Max): 15mA
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Voltage - Off State: 800V
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The S8006DRP is a high-performance silicon controlled rectifier (SCR), which is used for a variety of applications. It is a three-phase rectifier bridge with all four junctions in a single package, ideal for applications where high efficiency is required.

The S8006DRP is designed to provide a high-current, low-loss switching chemical reaction in a variety of power control and circuit protection applications. It is ideal for sensitive switching, motor drives, medical equipment, building automation as well as power supplies.

The S8006DRP can be used in low-power applications such as sensors and solid state relays, where low switching loss and high-current capability are required. It is also suitable for resonant topologies such as phase-shift or zero-voltage transitions, where very small switching loss is important. Its high current capability makes it ideal for high power applications such as construction equipment and industrial automation.

The S8006DRP SCR works on the principle of a thyristor and is based on the "Gunn" effect. This is when electrons pass through a p-n junction under forward bias and get trapped in the depletion region. This region allows current to flow in the reverse direction, forming a low-voltage semiconductor switch. As thetrapped electrons are released, they provide a fast current turn-off, making this device ideal for high power applications.

The S8006DRP is ideal for applications that require forward conduction of current without a need for overvoltage protection. Its reverse blocking capabilities make it suitable for applications where voltage and current regulation are required. It is also suitable for applications that require a slow turn-on and off..

Its high speed switching capabilities make it ideal for applications where precision and accuracy are needed, such as pulse width modulation (PWM) and cooling systems. Its wide temperature range and reliability make it suitable for environments that require a high temperature. Its high current rating makes it suitable for high power applications where large currents are needed.

Overall, the S8006DRP is an excellent device for both low-power and high-power applications. Its fast switching capabilities, low loss performance, and wide temperature range make it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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