Allicdata Part #: | S85DRGN-ND |
Manufacturer Part#: |
S85DR |
Price: | $ 5.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 200V 85A DO5 |
More Detail: | Diode Standard, Reverse Polarity 200V 85A Chassis,... |
DataSheet: | S85DR Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 4.86820 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 85A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 85A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 180°C |
Description
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S85DR is a fast rectifier family of Vishay Intertechnology. It is a single diode component and is designed for power of up to 200 V. They are suitable for applications like voltage rectification, diode bridge circuits, and small power supplies, and are used in high frequency power supply and general power applications. They provide enhanced system reliability and improved thermal performance. The S85DR family consists of 600 V and 200 V components with a variety of power ratings up to 6 A. The rectification devices have four types of dual diode configurations: forward conducted, forward blocked, reverse conducted, and reverse blocked. These configurations provide a versatile range of custom designs. The S85DR devices come with surge current capability up to 18 A. The S85DR family offers various levels of EMI/RFI performance to support the various requirements from different applications. Its leading industry-standard copper metallization ensures superior mechanical strength, environmental stability, and thermal management. The dual diode configurations are designed for use in applications with an ambient temperature ranging from -40 to +125 °C. The working principle of the S85DR is based on its ability to rapidly switch between conducting and blocking the flow of current. It is designed with the ability to conduct in the forward direction when the anode is positive and to block current in the reverse direction when the anode is negative. It is also designed to reduce the amount of heat generated when conducting in the forward direction. This improves the overall efficiency of the circuit and also allows for higher power dissipations. When used in a diode bridge circuit, the S85DR rapidly switches between conducting and blocking current. The current flow is blocked in one direction and then allowed to flow through in the other direction. This allows for voltage rectification and efficient power conversion. The S85DR\'s fast switching speed also allows for higher power ratings with distributed current dissipation. In addition, the S85DR is designed to provide excellent EMI/RFI noise reduction performance. It utilizes a robust copper metallization process with a low-inductance topology. This provides improved shielding and allows for a greater level of protection against EMI-related issues. This protection helps reduce the amount of downtime due to EMI-related issues. The S85DR fast rectifier family is suitable for a variety of applications, such as power supply designs, diode bridge circuits, and voltage rectification. It offers excellent power handling capabilities as well as exceptional reliability and EMI/RFI noise suppression performance. It is designed for use in temperatures ranging from -40 to +125 °C and is suitable for medium and high power applications. With its fast switching speed, it provides efficient power conversion and rectification.The specific data is subject to PDF, and the above content is for reference
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