SA2J-E3/5AT Allicdata Electronics
Allicdata Part #:

SA2J-E3/5AT-ND

Manufacturer Part#:

SA2J-E3/5AT

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 2A DO214AC
More Detail: Diode Standard 600V 2A Surface Mount DO-214AC (SMA...
DataSheet: SA2J-E3/5AT datasheetSA2J-E3/5AT Datasheet/PDF
Quantity: 1000
7500 +: $ 0.04167
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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SA2J-E3/5AT Application Field and Working Principle

Diodes are widely used in electrical circuits for their basic function of rectifying alternating current (AC) to direct current (DC). The SA2J-E3/5AT is a single-phase, fully isolated, ultra-fast recovery rectifier diode with a maximum forward current of 5A and a peak repetitive reverse voltage of 500V. This diode is designed for a wide range of applications including broadband switching, frequency conversion, high-frequency impulse shaping, and power factor correction.

Working Principle

The SA2J-E3/5AT is a high-efficiency, ultra-fast rectifier diode that uses a unique construction of internal components to enable fast recovery due to its high forward current capability and low capacitance. The diode is composed of two parts: the anode, which is made of doped silicon, and the cathode, which is made of aluminum. At room temperature, the layers of doped silicon and aluminum form an ideal semiconductor for rectification. The anode and cathode are connected so that current flows from the anode to the cathode when the diode is forward biased. When reverse biased, however, current is blocked from flowing.

The forward bias of the diode is enabled by applying a potential difference between the anode and the cathode. When this potential difference is greater than the diode’s breakdown voltage, electrons are drawn from the anode to the cathode, leading to a flow of current. This flow of current is prevented when reverse bias is applied to the diode because the potential difference between the anode and the cathode is now reversed. The reverse breakdown voltage of the SA2J-E3/5AT is 500V.

The high forward current capability and low capacitance of the diode enable it to recover quickly and allows it to switch rapidly between on and off states. This makes it suitable for applications that require high rates of change, such as broadband switching and high-frequency impulse shaping. Additionally, the wide range of breakdown voltages available allows it to be used in a variety of applications, including power factor correction.

Application Field

The SA2J-E3/5AT is an ultra-fast recovery rectifier diode designed for a wide range of applications. It is most widely used for broadband switching, frequency conversion, high-frequency impulse shaping, and power factor correction.

Broadband switching is the process of rapidly switching between different frequencies, such as those used in radio communications and digital signal processing. The SA2J-E3/5AT’s fast recovery time is ideal for this application as it allows for rapid switching without distortion or other issues.

Frequency conversion is also commonly used in radio communications and digital signal processing. The SA2J-E3/5AT is able to convert signals among a range of frequencies due to its low capacitance and fast recovery time.

High-frequency impulse shaping is also commonly used for radio communications and digital signal processing, as well as for pulse shaping applications. The SA2J-E3/5AT can be used for this application due to its fast recovery time, which helps reduce distortion and noise.

The SA2J-E3/5AT can also be used for power factor correction. It is able to reduce the electrical noise produced by AC power sources, resulting in better quality of power. This is due to its fast recovery time and low capacitance.

Conclusion

The SA2J-E3/5AT is a single-phase, fully isolated, ultra-fast recovery rectifier diode with a maximum forward current of 5A and a peak repetitive reverse voltage of 500V. It is designed for a wide range of applications including broadband switching, frequency conversion, high-frequency impulse shaping, and power factor correction. The diode’s fast recovery time and low capacitance enable it to switch rapidly between on and off states, allowing for high rates of change in signal strength, frequency, and noise reduction. With its wide range of applications, the SA2J-E3/5AT is a reliable and efficient diode for many applications.

The specific data is subject to PDF, and the above content is for reference

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