SA2M-E3/61T Discrete Semiconductor Products |
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Allicdata Part #: | SA2M-E3/61TGITR-ND |
Manufacturer Part#: |
SA2M-E3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 2A DO214AC |
More Detail: | Diode Standard 1000V 2A Surface Mount DO-214AC (SM... |
DataSheet: | SA2M-E3/61T Datasheet/PDF |
Quantity: | 5400 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 2A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5µs |
Current - Reverse Leakage @ Vr: | 3µA @ 1000V |
Capacitance @ Vr, F: | 11pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | SA2M |
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The SA2M-E3/61T is a single, high power, recoverable thyristor which is used in industries such as automotive, telecommunications and consumer electronics. It has a maximum operating temperature range of +175°C and a maximum forward current rating of 8A. It is also a low on-state voltage drop and low thermal load device, making it ideal for applications that require high efficiency and low current leakage. The SA2M-E3/61T is a three-terminal device with an anode, cathode and gate, making it suitable for many different applications. The anode is connected to the positive side of the DC power source, while the cathode is connected to the negative side. The gate is used to control the on-state conduction and off-state breakdown of the device. The device has a minimum on-state voltage drop of 0.7V, making it an ideal choice for many low voltage applications. The maximum forward current rating of 8A also makes it suitable for automotive, telecommunications and consumer electronics applications.
The working principle of a SA2M-E3/61T is based on a static thyristor whose operation is based on the positive-gate control principle. The barrier breakdown is the principle by which the SCR is controlled. In the off state, the two PN junctions of the SCR are reversed biased. When the gate voltage is applied, the two junctions become forward biased and current flows, causing the thyristor to switch on. The current at the anode is limited by the gate current (IG) and can range from a few microamps up to 800mA. In order to switch the SCR off, the gate current must be removed.
The SA2M-E3/61T is widely used in many power supplies and other power switching applications. Some applications that require a low on-state voltage drop and low thermal load, such as DC to DC power supplies, motor control, process control and switching circuits, are also suitable for the SA2M-E3/61T. It can also be used in power supplies for mobile devices, uninterruptible power supplies, LED lighting, and solar inverters. The durability of the device also makes it suitable for applications that require high levels of reliability.
In conclusion, the SA2M-E3/61T is a reliable and durable single thyristor with a low on-state voltage drop and low thermal load. Its wide range of applications make it suitable for many industries, from automotive to telecommunications and consumer electronics. Its maximum forward current rating of 8A also makes it an ideal choice for many low voltage applications. Its positive gate control principle makes it easily controllable and reliable, making it an ideal choice for many applications requiring power control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SA2M-M3/5AT | Vishay Semic... | 0.05 $ | 1000 | DIODE GPP 2A 1000V DO-214... |
SA2M-M3/61T | Vishay Semic... | -- | 1000 | DIODE GPP 2A 1000V DO-214... |
SA2M-E3/61T | Vishay Semic... | -- | 5400 | DIODE GEN PURP 1KV 2A DO2... |
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