SA8V5A Allicdata Electronics
Allicdata Part #:

SA8V5A-ND

Manufacturer Part#:

SA8V5A

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: TVS DIODE 8.5V 14.4V DO15
More Detail: N/A
DataSheet: SA8V5A datasheetSA8V5A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 34.7A
Base Part Number: SA8V5
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: --
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Series: --
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Voltage - Reverse Standoff (Typ): 8.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS – Diodes: SA8V5A Application Field and Working Principle

TVS – diodes, also known as transient voltage suppressors, are specially designed devices used in electronics products to prevent damage caused by voltage spikes or short bursts of high voltage. Such voltage spikes can be caused by events such as lightning strikes, circuit switching on or off, and contact with electromagnetic waves. The SA8V5A diode is a silicon avalanche, monolithic integrated circuit in POC package, specifically designed to provide superior reliability and protection in high voltage applications.

Application Field

SA8V5A has a wide range of applications. Its two main uses are as the main switch element of shunt switching regulators and as the output protection element of the IGBT short-circuit protection circuit. Leading examples of its applications include high voltage switching, IGBT short-circuit protection and battery protection.

Working Principle

The SA8V5A utilizes a unique p-type junction avalanche breakdown sourcing technology in combination with the well-known avalanche diode principle. This is because when the reverse voltage of the diode is overcome, carriers (electrons) are accelerated and interaction with lattice atoms generates a second-generation of electrons, before driving into an avalanche zone. Due to the impact of the electric field formed between the avalanche zone and the original p-n junction, the current in this region multiplies rapidly, resulting in the circuit being broken down and the SA8V5A has therefore burst.

At the same time, an inversed voltage also appears across the diode terminal of the application circuit. Since the avalanche current reaches the maximum avalanche break time as soon as the peak voltage of the power supply side is reached, the avalanche current of the diode can be controlled between 20 and 30 mA, with a rise time of less than 2ns, such that the reverse surge current can be absorbed quickly and non-destructively.

In conclusion, the application and working principle of the SA8V5A diode has proven to be highly effective and advantageous, with its wide range of applications in various high voltage applications. As such, the SA8V5A is highly recommended for use in high power electronics products to prevent possible damages due to voltage spikes.

The specific data is subject to PDF, and the above content is for reference

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