SB1H100-E3/73 Allicdata Electronics
Allicdata Part #:

SB1H100-E3/73GITB-ND

Manufacturer Part#:

SB1H100-E3/73

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 100V 1A DO204AL
More Detail: Diode Schottky 100V 1A Through Hole DO-204AL (DO-4...
DataSheet: SB1H100-E3/73 datasheetSB1H100-E3/73 Datasheet/PDF
Quantity: 102000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 102000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: 175°C (Max)
Base Part Number: SB1H100
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SB1H100-E3/73 with its low forward voltage, fast switching speed and low leakage current is commonly used for various application fields. It is a single diode rectifier that provides robust performance for industrial and consumer applications. The SB1H100-E3/73 has a high voltage capability, which allows the device to be used in higher-voltage applications.

The SB1H100-E3/73 is used in applications such as switching power supplies and high-frequency DC-DC converters, as well as in synchronous rectifier circuits. It can also be used in applications requiring high-speed operation, as well as in applications whose load current changes frequently. This makes the device a good choice for battery packs.

The working principle of the SB1H100-E3/73 is based on the PN junction diode. The device is fabricated on a single semiconductor layer which consists of two regions: a lightly-doped P-type region at the anode and a heavily-doped N-type region at the cathode. When DC voltage is applied to the device, it becomes a bidirectional conductive path and current passes through the device. When the forward voltage is greater than the threshold voltage of the device, a junction between the regions is formed, allowing current to flow through the device.

When the applied voltage is reverse-biased, the junction between the regions becomes depleted. In this state, current does not flow through the device, and the device acts as a diode rectifier, blocking current from flowing in the opposite direction. This prevents reverse currents from damaging the device or the circuit.

The SB1H100-E3/73 is a reliable and cost-efficient device for a wide array of applications. Its high voltage capability, fast switching speed and low leakage current make it a great choice for power supplies and DC-DC converters. In addition, its ability to rectify current ensures that devices such as batteries are not damaged by reverse currents. As such, the SB1H100-E3/73 is an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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