SBR05U40CSP-7 Allicdata Electronics
Allicdata Part #:

SBR05U40CSP-7DITR-ND

Manufacturer Part#:

SBR05U40CSP-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SBR 40V 500MA WLB1006
More Detail: Diode Super Barrier 40V 500mA Surface Mount X2-WLB...
DataSheet: SBR05U40CSP-7 datasheetSBR05U40CSP-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: SBR®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 40V
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: X2-WLB1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SBR05U40
Description

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The SBR05U40CSP-7 is a rectifier diode that is specifically designed to meet the high-speed switching application requirements of modern electronics. This diode is a single phase, high-efficiency rectifier diode that can be used in both AC and DC applications. It is primarily used in applications such as power MOSFETs, DC-to-DC converters, low-voltage power supplies, motor control, AC line cords, and so on.

The SBR05U40CSP-7 rectifier diode is composed of a silicon die and a metal-oxide-semiconductor (MOS) gate, enclosed in a hermetically sealed ceramic package with internal and external leads that facilitate its connection to a circuit. The diode’s high-speed switching characteristic is achieved by the MOS gate, which allows the diode to be switched between two states, conducting and non-conducting, with significantly lower resistance in the conducting state and significantly higher resistance in the non-conducting state.

The working principle of the SBR05U40CSP-7 is based on the way a P-type and N-type semiconductor material interact when they come into contact. When negative voltage is applied to the P-type semiconductor, the negatively-charged free electrons will be attracted to the positively-charged holes in the material, cross-linking them and forming a conducting path. The amount of current that passes through this conducting path is determined by the amount of voltage applied to the semiconductor. When a positive voltage is applied to the N-type semiconductor, the positively-charged holes move away from the negatively-charged free electrons, effectively forming an open-circuit and preventing current from flowing.

The combination of the fast switching characteristics of the MOS gate and the electrical principles of the semiconductor material enable the SBR05U40CSP-7 to provide high-speed, high-efficiency rectification. This makes it an ideal solution for applications that require fast, reliable rectification in both AC and DC circuits. In addition, the diode’s hermetically sealed ceramic package helps to protect the chip against damage from contaminants, such as moisture, dust and debris.

The SBR05U40CSP-7 rectifier diode is therefore an ideal solution for a wide range of industrial and consumer applications. In power MOSFETs, for example, it can be used to protect the MOSFET from unexpected voltage, current, and temperature spikes. In low-voltage power supplies, it can be used to provide fast, efficient p-n junction rectification. And in AC line cords, it can be used to provide fast, reliable switching for increased safety.

In summary, the SBR05U40CSP-7 is a single-phase, high-efficiency rectifier diode that is specifically designed to meet the high-speed switching requirements of modern electronics. Through its combination of fast switching characteristics and its hermetically sealed ceramic package, the diode provides superior performance in both AC and DC circuit applications, making it an ideal solution for a wide range of industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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