SBR5E60P5-13D Allicdata Electronics
Allicdata Part #:

SBR5E60P5-13D-ND

Manufacturer Part#:

SBR5E60P5-13D

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SBR 60V 5A POWERDI5
More Detail: Diode Super Barrier 60V 5A Surface Mount PowerDI™ ...
DataSheet: SBR5E60P5-13D datasheetSBR5E60P5-13D Datasheet/PDF
Quantity: 1000
5000 +: $ 0.12058
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 220µA @ 60V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single, SBR5E60P5-13D is a type of rectifier in an HV (High Voltage) form that is compatible for many different applications. It comes in a TO-220 package and features a maximum power dissipation of up to 70 watts. It also has a forward voltage of 5.6V and a current rating of 13A.

The SBR5E60P5-13D is most commonly used in power conversions, such as AC to DC or DC to DC. This rectifier has low forward voltage drop, high current capability, and excellent thermal resistance. Due to its versatility, it is also used in motor control and lighting applications. The SBR5E60P5-13D is a reliable solution for applications where larger power needs to be handled.

The working principle of the SBR5E60P5-13D is based on the PN junction diode. A PN junction forms a barrier between two different materials, such as between an N-type and a P-type silicon semiconductor. The barrier consists of a depletion layer, in which there are no mobile charges and every gap between atoms is depleted of its electrons. The barrier acts as a one-way valve for current. When a certain voltage is applied, the barriers break down and a current starts to flow.

When operating at room temperature, the SBR5E60P5-13D exhibits a high breakdown voltage, which is a measure of its maximum voltage capability. This means that the SBR5E60P5-13D can handle large amounts of power with minimal current leakage at high voltages. The diode also has a reverse recovery time, which is the amount of time it takes for the diode to recover to its original state after reverse bias has been applied. It is important for applications where the power needs to quickly switch between directions.

The SBR5E60P5-13D is an excellent choice for various applications where power needs to be routed from one place to another with minimal power loss. Its low forward voltage drop, high current capability, and excellent thermal resistance make it one of the most popular rectifier options available on the market today. It is well-suited for motor control, lighting applications, and other power conversion uses that require efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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