SBR60A200CT

Series:	SBR®
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Super Barrier
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io) (per Diode):	30A
Voltage - Forward (Vf) (Max) @ If:	960mV @ 30A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	100µA @ 200V
Operating Temperature - Junction:	-65°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to SBR60A200CT

The SBR60A200CT is a silicon rectifier diode from Shindengen Electric MFG Co., Ltd. It is a planar diffusion-type, bridge rectifier that is available in a DPAK surface mount package. It is suitable for low-voltage and moderate-current applications. The SBR60A200CT features a forward voltage drop of 200 mV, a reverse voltage of 60 V, an output current of 12 A, a reverse recovery time of 4 us, and an RMS current rating of 20 A. The diode is provided in a TO-247AD packaging which has a total width of 13.5 mm and a total length of 12 mm.

Application Field of SBR60A200CT

The SBR60A200CT can be used in a wide range of applications, such as signal rectification, battery charging, AC/DC converters, inverters, and motor controllers. It can also be used for power conditioning in automotive, industrial, and medical applications. It can be used with full-bridge forward converters and back-to-back voltage-controlled switches. Due to its low voltage drop and fast reverse recovery time, it is good for applications with high efficiency requirements. It is also suitable for pulse width modulated (PWM) applications. It also works well in low-voltage/high-current rectification and power conditioning applications. The SBR60A200CT is designed to meet requirements of Underwriters Laboratories Inc. (UL) standards, and is rated for environmental protection against dust, moisture, and corrosive gas.

Working Principle of SBR60A200CT

The SBR60A200CT is a four-terminal, double-rectifier diode. The diode consists of four PN junction diodes connected in a bridge configuration. When operated in forward bias mode, the two junctions closest to the anode are forward biased and two closest to the cathode are reverse biased. In forward bias mode, when a positive voltage is applied to the anode with respect to the cathode, the diode allows current to flow from the anode to the cathode. The current flow is unimpeded and the voltage across the diode is about 200 mV. The forward current is limited by the series resistances between the cathode and the anode, and by the parasitic series inductance.In reverse bias mode, when the cathode is positive with respect to the anode, the diode blocks current from flowing. When the reverse voltage exceeds the breakdown voltage of the diode, it will become conductive and short-circuit. Reverse recovery time is the time taken by the diode to reverse biased after the forward current has stopped flowing. In the case of the SBR60A200CT, it has an RMS current rating of 20 A and a reverse recovery time of 4 us.

Conclusion

The SBR60A200CT is a high-performance silicon rectifier array from Shindengen Electric MFG Co., Ltd. It is a four-terminal, double-rectifier diode that is available in a DPAK surface mount package. It has a forward voltage drop of 200 mV, reverse voltage of 60 V, output current of 12 A, reverse recovery time of 4 us. It is suitable for low-voltage and moderate-current applications like signal rectification, battery charging, AC/DC converters, inverters, motor controllers, and power conditioning in automotive, industrial, and medical applications. The SBR60A200CT is also designed to meet requirements of Underwriters Laboratories Inc. (UL) environmental protection standards.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description