SBR8M100P5-13D

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The SBR8M100P5-13D can be classified as diodes – rectifiers – single. It is an efficient and reliable semiconductor device for switching and rectification. The device is especially suitable for its use in equipment such as AC mains disconnects and electromagnetic field detectors, as well as in automotive systems, dc-to-ac inverters and more.

The SBR8M100P5-13D has a solid state PN junction that can be used in various conduction modes. It is capable of high frequency, low harmonics and energy efficient rectification. The device has a built-in polarity protection, high surge withstand capability and thermal protection. It also has a noise immunity feature to reduce signal distortion or noise. The SBR8M100P5-13D is designed to provide high power efficiency and low heat dissipation.

The SBR8M100P5-13D has the following working principle. The PN junction is configured with a PN diode connected between the Anode and Cathode with a small reverse-recovery time. When the PN junction is forward biased, current flows from Anode to Cathode as excess minority carriers are filled in the depletion region. Under forward bias, current can flow from the Anode to the Cathode and it is referred to as the forward conduction mode. During a reverse bias, the potential barrier increases and minority carriers are not injected, thus preventing current flow from the Cathode to Anode.

SBR8M100P5-13D uses a high-frequency switching technology, called MOSFET or Metal Oxide Semiconductor Field Effect Transistor. It is designed to be highly efficient and reliable. It is capable of switching at frequencies of up to 100kHz, with a very low on-state resistance. The device is also capable of providing up to 8A peak pulse current with a reverse recovery time of 400ns.

The SBR8M100P5-13D is applicable to a wide range of applications and is ideal for use in AC mains disconnects, electromagnetic field detectors and automotive systems, such as dc-to-ac inverters. It also finds use in telecommunications equipment, Magnetic Resonance Imaging (MRI) systems, power supplies and more. Moreover, this device can also be used as a rectifier diode in rectifier bridges and other power rectification duties.

The SBR8M100P5-13D is a reliable and efficient device that can be used in a wide range of applications. Its low on-state resistance, thermal protection, built-in polarity protection and high surge withstand capability make it ideal for AC mains disconnects, automotive systems and power rectifiers. With its high-frequency switching technology, it can provide up to 8A peak pulse current and a reverse recovery time of 400ns. Moreover, it can also be used in a variety of other applications, such as telecommunications equipment and MRI systems.

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