SBRT40V100CTFP Allicdata Electronics
Allicdata Part #:

SBRT40V100CTFP-ND

Manufacturer Part#:

SBRT40V100CTFP

Price: $ 0.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SBR 100V 20A POWERDI5
More Detail: Diode Array 1 Pair Common Cathode Super Barrier 10...
DataSheet: SBRT40V100CTFP datasheetSBRT40V100CTFP Datasheet/PDF
Quantity: 1000
50 +: $ 0.87318
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Series: Automotive, AEC-Q101, TrenchSBR
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 730mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 100V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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SBRT40V100CTFP is characterized as diodes - rectifiers - arrays that is found in a range of electronic components. It is a rectifying Schottky barrier diode (SBD) in a tab-locked package that provides higher conducting speed than conventional products. It can be used for high-speed switching applications or for the low-frequency switching power supply. SBRT40V100CTFP contains two or four diodes connected in series or series/parallel configuration.

The application field of SBRT40V100CTFP is mainly used in applications that require low noise, high switching speed and very low forward voltage drop such as bridge rectifiers, freewheeling, and transmission line protection. It is well suited for power factor correction in power supplies which require very low forward voltage drop. Moreover, it is also used in high current, high forward voltage drop applications, such as active-clamp forward converters and non-inverse conduction switching thyristors.

Working principle of SBRT40V100CTFP is based on its internal p-n junction diode. The p-n junction diode was invented by Dr Julius Edgar Lilienfeld and is commonly referred to as the Schottky diode and is made from a semiconducting material. In SBRT40V100CTFP, when a positive voltage applied to the diode anode and negative voltage applied to the diode cathode, the diode provides a low voltage conduction path or the “on” state.

When positive voltage is applied to the diode anode and the negative voltage is applied to the diode cathode, the Schottky diode acts as an open switch, applying no electrical current. This makes it possible to use the diode as a rectifying, high speed switching device with low forward voltage drop. The high-speed switching capability of the SBRT40V100CTFP makes it an ideal choice for applications where very low noise is required and high switching speed is necessary.

When two or more SBRT40V100CTFP diodes are connected in series or series/parallel (triangular) configurations, the forward voltage drop across each diode is lowered, resulting in higher current conduction capability and improved response times for certain circuit designs. Another advantage is that each individual SBRT40V100CTFP diode can be replaced or recovered, allowing for easier maintenance and repair for certain large scale applications.

In summary, SBRT40V100CTFP is a series of rectifying Schottky barrier diodes that is optimized for applications requiring low noise, high switching speed, and very low forward voltage drop. It can also be used in high current, high forward voltage drop applications, such as active-clamp forward converters and non-inverse conduction switching thyristors. When used in series or series/parallel (triangular) configurations, the forward voltage drop across each diode is lowered, resulting in higher current conduction capability and improved response times for certain circuit designs.

The specific data is subject to PDF, and the above content is for reference

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