SCS110KGC Allicdata Electronics
Allicdata Part #:

SCS110KGC-ND

Manufacturer Part#:

SCS110KGC

Price: $ 13.71
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE SCHOTTKY 1.2KV 10A TO220AC
More Detail: Diode Silicon Carbide Schottky 1200V 10A (DC) Thro...
DataSheet: SCS110KGC datasheetSCS110KGC Datasheet/PDF
Quantity: 1000
1000 +: $ 12.34230
Stock 1000Can Ship Immediately
$ 13.71
Specifications
Series: --
Packaging: Tube 
Part Status: Not For New Designs
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 650pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Description

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The SCS110KGC diode, classified as a single rectifier, is a type of semiconductor used in a variety of electronic applications. It is capable of handling up to 110 amps of peak repetitive reverse and forward current. The SCS110KGC does not require a bypass diode, providing a high level of device safety for applications that require the passing of reverse voltage. It also has relatively low forward voltage drop and a low power dissipation.

The SCS110KGC is used in radio or television receivers, as well as many other types of communication, networking and consumer consumer electronics. It is especially suitable for use in dc-dc converters, motor control and switching power supplies. In these applications, the SCS110KGC is used as a rectifier to convert alternating current (AC) to direct current (DC).

The working principle of the SCS110KGC is based on its ability to control the flow of electrons. When it is placed in the circuit, a forward bias voltage is applied to the anode and the cathode of the diode. This allows the electrons to flow freely, resulting in current flow in the direction of the applied voltage. On the other hand, if the reverse bias voltage is applied, the electrons can no longer flow freely and current flow is blocked, and thus the diode acts as an insulator.

The most important factor when selecting a diode is the maximum forward current (I F ) rating which is the maximum current that can flow through the diode in forward bias. If the forward current exceeds the limit, the diode will be destroyed and the device will become unusable. Moreover, the maximum reverse current (I R ) rating and the maximum peak voltage (V P ) ratings should also be considered. Finally, the forward voltage drop (V F ) of the diode should be taken into account. A low V F can result in higher efficiency and better power dissipation.

In conclusion, the SCS110KGC diode is suitable for a variety of communications, networking and consumer electronics applications due to its ability to handle up to 110 amps of peak repetitive forward and reverse current ratings. It has a low forward voltage drop and a low power dissipation, and does not require a bypass diode for device safety. Lastly, the factor of the maximum forward current (I F ) rating, maximum reverse current (I R ) rating, maximum peak voltage (V P ) ratings and the forward voltage drop (V F ) are important considerations when selecting a diode.

The specific data is subject to PDF, and the above content is for reference

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