Allicdata Part #: | SCSPFF15L-ND |
Manufacturer Part#: |
SCSPFF15L |
Price: | $ 273.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | ASSY RECT 150V 75A SFAST REC |
More Detail: | Diode Array 150V 75A Module |
DataSheet: | SCSPFF15L Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 245.79800 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | -- |
Diode Type: | -- |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io) (per Diode): | 75A |
Voltage - Forward (Vf) (Max) @ If: | 970mV @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 60µA @ 150V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | -- |
Package / Case: | Module |
Supplier Device Package: | -- |
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Diodes, also known as rectifiers, are electronic devices used to convert alternating current (AC) into direct current (DC). Arrays of diodes in ree or more configurations form the basis of a rectifier, where they convert alternating current into direct current and can also be used to regulate power in various applications. A Schottky barrier rectifier, or SCSPFF15L for short, is one such array and this article takes a look at its application field and working principle.
SCSPFF15L rectifier arrays are widely used in power applications because of their high power efficiency. Due to their Schottky barrier construction, SCSPFF15L rectifier arrays can handle higher voltage levels with greater stability, making them ideal for applications such as AC/DC power conversion, DC/DC converters, battery charging, and solar power applications. SCSPFF15L rectifier arrays also have low forward voltage drops and can operate in high frequency environments, making them suitable for use in switching power supplies, power conditioners and uninterruptible power supplies (UPS).
The working principle of an SCSPFF15L rectifier array is based on the Schottky barrier principle. A Schottky barrier rectifier is formed when two different types of semiconductor materials—an intrinsic and an extrinsic semiconductor—are placed in close contact, forming a Schottky barrier junction. This barrier is capable of rectifying the alternating current because of its rectifying characteristics, and this is the basis of its working principle.
Under reverse bias, the Schottky barrier rectifier exhibits very low leakage current. This is because the voltage across the barrier decreases exponentially with the increase in reverse bias voltage and the total current is almost zero. However, under forward bias, the Schottky barrier rectifier exhibits high current flow due to the rectifying characteristics of the barrier. This is the basis of its working principle.
On the other hand, the Schottky barrier rectifier also exhibits low on-state resistance, which means that there is less power loss during its operation. This makes the SCSPFF15L rectifier array one of the most efficient rectifier solutions available on the market today. In addition, the low forward voltage drop makes the SCSPFF15L rectifier array suitable for use in applications with high switching speeds, such as switching power supplies.
In conclusion, SCSPFF15L rectifier arrays are widely used in power applications due to their high power efficiency. Their working principle is based on the Schottky barrier principle, which is capable of rectifying the alternating current due to its rectifying characteristics. Furthermore, the Schottky barrier rectifier also exhibits low on-state resistance and low forward voltage drop, making it an efficient and reliable rectifier solution.
The specific data is subject to PDF, and the above content is for reference
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