![SD101BWS-E3-08 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SD101BWS-E3-08-ND |
Manufacturer Part#: |
SD101BWS-E3-08 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 150MW 50V SOD323 |
More Detail: | Diode Schottky 50V 30mA (DC) Surface Mount SOD-323 |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.03387 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 30mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 15mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 1ns |
Current - Reverse Leakage @ Vr: | 200nA @ 40V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -55°C ~ 125°C |
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Application Field
SD101BWS-E3-08 is a single rectifier diode designed by Taiwan Semiconductor Corporation (TSMC). It combines robustness and excellent current carrying capacity. SD101BWS-E3-08 diodes are widely used in a variety of applications, such as frequency conversion, power supplies, input rectification, electronic ballasts, automotive, solar and photovoltaic power supplies, and lighting, among others. The diode is also used in power circuits in telecommunications systems and in converter equipment in industrial automation.
Working Principle
SD101BWS-E3-08 is a breakdown voltage of a silicon single rectifier diode and is composed of two series-connected rectifier diodes. Both the anode and the cathode are semiconductor materials that form two p-n junctions. Therefore, the forward biasing voltage will activate the diode and allow the diode to conduct current. When the anode voltage is negative, the diode is reverse biased and cannot conduct current. The reverse breakdown voltage of the diode will be determined by the doping concentration and the junction distance of the diode.
When the anode voltage exceeds the breakdown voltage, because the current is beyond the normal reverse conduction level, the body effect will be generated and the reverse voltage of the diode will be reduced. Since the junction capacitance of the diode will also reduce, and due to the polarity of the junction connected in the diode, the diode can be turned off. The reversed conduction of the voltage will restore the resistance of the diode, so it will not be damaged.
The majority carrier of the diode will flow in the direction indicated, and the minority carriers will be efficiently injected in the opposite direction, the reverse bias direction. A parasitic capacitor will be formed between the minority carriers, leading to a larger reverse leakage current. This leakage current will not damage the diode.
The SD101BWS-E3-08 diode is also sensitive to temperature, so it should be designed and used with consideration of the thermal characteristics of the diode. The junction temperature of the diode should be kept as low as possible to keep the diode from damage.
In conclusion, SD101BWS-E3-08 diodes are widely used in a variety of applications and are highly reliable due to their robustness and excellent current-carrying capacity. The performance of these diodes will be affected by temperature and should be taken into account when designing or using the diodes.
The specific data is subject to PDF, and the above content is for reference
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