Allicdata Part #: | SD1143-01-ND |
Manufacturer Part#: |
SD1143-01 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor NPN 18V 2A 175MHz 20W Chassis Mount ... |
DataSheet: | SD1143-01 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 18V |
Frequency - Transition: | 175MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB |
Power - Max: | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 2A |
Operating Temperature: | 200°C |
Mounting Type: | Chassis Mount |
Package / Case: | M113 |
Supplier Device Package: | M113 |
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The SD1143-01 is a new type of small size RF bipolar junction transistor (BJT) that is widely used in various applications. It is the first in a series of RF BJTs from the SD1143 series, which are designed to be used in high gain, high frequency applications such as amplifiers and mixers.
The SD1143-01 is a NPN device with a collector-base breakdown voltage of 70V and a maximum collector-emitter voltage of 55V. It has an Obelix 5GHz operating frequency range and is capable of a maximum continuous collector current of 1A. The device also features a low noise figure of 1.2dB and a maximum power output of 16dBm.
The SD1143-01 is primarily used in RF amplifiers applications. It is also very suitable for use in low noise receivers, modulators and other RF circuits. The device offers high gain with low noise and power consumption, allowing for improved performance and reliability. The device has a very low thermal resistance of 0.03°C/W and can thus be used in high temperature environments.
The SD1143-01 has a very unique working principle compared to other BJTʼs. It works by producing an amplified signal with a low-noise figure, due to its low collector-emitter voltage and current. This low voltage and current also enables the device to have a low power consumption and a high gain as well. This makes it highly suitable for applications where a low-noise amplified output is required.
The SD1143-01 has a wide range of applications in various fields, such as automotive electronics, industrial systems, medical electronics and other RF applications. Its small size and low power consumption make it suitable for space-constrained and power-sensitive applications. It can be used in applications that require amplification of low-level signals, such as in satellite systems or communication systems.
In conclusion, the SD1143-01 is a versatile and efficient RF bipolar junction transistor that is suitable for various high gain, high frequency applications. It offers a wide range of benefits such as high gain, low-noise figure, low power consumption, and high thermal resistance. Its unique working principle makes it an ideal choice for applications that require a low-noise amplified output. The SD1143-01 is capable of meeting the demands of various applications and can be used in environments ranging from automotive electronics to industrial systems and medical electronics.
The specific data is subject to PDF, and the above content is for reference
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