Allicdata Part #: | SDHD5KS-ND |
Manufacturer Part#: |
SDHD5KS |
Price: | $ 196.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 5KV 2.5A |
More Detail: | Diode Standard 5000V 2.5A Through Hole |
DataSheet: | SDHD5KS Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 176.89700 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 5000V |
Current - Average Rectified (Io): | 2.5A |
Voltage - Forward (Vf) (Max) @ If: | 6V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 5000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Module |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A silicon-controlled rectifier, or SCR, is a semiconductor device consisting primarily of a P-N junction between an anode and a cathode, such as a diode, that is designed to be turned on by an external gate current or voltage. As its name implies, the single SCR is a single-ended, three-layer, thyristor device. It has two very important characteristics:
The Application Field and Working Principle of SDHD5KS
The SDHD5KS is a single silicon-controlled rectifier (SCR) diode, which is specially designed for the use in switching power supplies and motor control applications. It is equipped with a built-in fast reverse recovery time, and a low resistance on-state connected to a low-voltage gate. The device is also capable of handling up to 150 volts in an effortless fashion. Furthermore, this diode also has a low dynamic resistance which enables it to handle high current without compromising on the efficiency of the application.
In order to understand how the device works, it is important to understand the different elements of the device. The anode is the positive connection that is used to conduct the current when the diode is turned on, while the cathode is the negative connection which serves to draw current out of the device when it is turned off. The gate is the control element which allows users to control the band-gap voltage of the device to turn it on or off. When the gate is being controlled, the reverse recovery time remains nearly constant throughout the life of the device.
When the gate is biased with a positive voltage, the threshold voltage of the SCR is exceeded and the device turns on. This turns the SCR into a low resistance channel through which the current passes easily. As the current passes through the SCR, the voltage drop across it along with the internal power dissipated act as the parameters which determine the heat generated by the device. This can be managed either by having a heat sink or special design in order to keep the temperature of the device within the desired limits.
When the gate is applied with a negative voltage, the threshold voltage is not exceeded and the device turns off. The SCR is then effectively an open circuit and no current flows through it. This prevents any power dissipation and the device does not generate any heat.
The SDHD5KS is an ideal device for a wide range of applications. It is designed with a fast switching time, low dynamic resistance and high temperature rating which make it an efficient device for use in high power applications. Furthermore, its low gate drive power, fast switching time and ability to handle high voltages also make it a highly useful and versatile device for applications ranging from motor control, power supplies and other industrial applications.
In summary, the SDHD5KS is a single silicon-controlled rectifier diode that is specially designed to be used in a number of applications ranging from motor control to switching power supplies. The device has low dynamic resistance and fast switching time and can handle high voltages with ease. Furthermore, the device requires low gate drive power and is highly reliable over a long lifespan. The device is an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SDHD5KM | Semtech Corp... | 111.29 $ | 1000 | DIODE GEN PURP 5KV 1ADiod... |
SDHD5K | Semtech Corp... | 152.87 $ | 1000 | DIODE GEN PURP 5KV 600MAD... |
SDHD15K | Semtech Corp... | 185.75 $ | 1000 | DIODE GEN PURP 15KV 600MA... |
SDHD10KM | Semtech Corp... | 186.76 $ | 1000 | DIODE GEN PURP 10KV 1ADio... |
SDHD5KS | Semtech Corp... | 196.55 $ | 1000 | DIODE GEN PURP 5KV 2.5ADi... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...