SDT40H120CTFP Allicdata Electronics
Allicdata Part #:

SDT40H120CTFP-ND

Manufacturer Part#:

SDT40H120CTFP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: SCHOTTKY RECTIFIER ITO-220AB TUB
More Detail: Diode Array 1 Pair Common Cathode Schottky 120V 20...
DataSheet: SDT40H120CTFP datasheetSDT40H120CTFP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 20A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 120µA @ 120V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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Diodes are devices that allow the flow of electrical current in one direction, while obstructing flow in the opposite direction. Rectifiers are devices that converts alternating current (AC) electricity, which periodically switches direction, into direct current (DC) electricity, which only flows in one direction. Diodes and rectifiers are great for smoothing out electrical pulses or blocking higher voltage from electronics. Arrays are diodes and rectifiers packaged together in one component.
The SDT40H120CTFP, also known as a DIRECTFET Power MOSFET, is a 4 by 10-cell power MOSFET array. It is a high-temperature device that can operate up to 175°C junction temperature and 175°C storage temperature, designed with N-Channel and P-Channel Cell Optimization. The SDT40H120CTFP has an avalanche energy capability of 6.5mJ and a repetitive avalanche capability of at least 3uJ, to withstand harsh environmental conditions. SDT40H120CTFP is part of DirectFET power MOSFETs, from International Rectifier (IR). DirectFETs are an advanced power MOSFET technology that combines an array of two or four cells optimally designed for high frequency switching performance and reliability.
The main application field for the SDT40H120CTFP is in switched power and driving applications such as Automotive and Industrial applications, audio, digital circuits, power management, and non-isolated DC-DC converters. This device can also be used in applications such as welding inverters, telecom, automotive and computer power supplies. It is optimized to meet the low switch voltage requirement needed to drive an H-bridge circuit or software controlled motor drive applications.
The SDT40H120CTFP is a power MOSFET and as such its working principle is based on the same principle as any other MOSFET. That is, when sufficient voltage is applied between the gate and the source of the device, a conducting channel is formed between the drain and the source. As with most power MOSFETs, this channel can be varied by changing the gate voltage. This allows for a much better control over the amount of current that is able to flow through the device. This can be useful for motors, solenoids, and other loads that require variable current.

The specific data is subject to PDF, and the above content is for reference

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