Allicdata Part #: | 1655-1963-ND |
Manufacturer Part#: |
SDUR2030 |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | UF RECOVERY RECTIFIER 300V TO-22 |
More Detail: | Diode Standard 300V 20A Through Hole TO-220AC |
DataSheet: | SDUR2030 Datasheet/PDF |
Quantity: | 4998 |
1 +: | $ 0.55440 |
50 +: | $ 0.42790 |
100 +: | $ 0.37265 |
500 +: | $ 0.27603 |
1000 +: | $ 0.22083 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 45ns |
Current - Reverse Leakage @ Vr: | 40µA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SDUR2030 is a single-phase silicon diode rectifier designed for general purpose applications. It is widely used in power supplies, motor drives, and other high-power applications. The diode is capable of supplying up to 30 amps of higher current for longer periods of time. The diode is constructed from a single piece of silicon and is capable of withstanding high voltages, high frequencies and high temperatures. The SDUR2030 has a maximum forward voltage of 2.0V and can withstand a reverse voltage of up to 400V.
The working principle of the SDUR2030 diode is based on the PN junction. This type of diode is made up of two layers of semiconducting material, where one has an excess of charge carriers (electrons), and the other an excess of holes (positive charges). When a forward bias voltage is applied, the conduction band between the two layers is increased, allowing a current to flow between them. This is because a greater potential barrier is imposed on the electrons, preventing them from recombining with the opposite charge carriers in the opposite layer. The current that passes through the diode has been slowed down, which is referred to as the reverse recovery time. In practice, the current is reduced by the forward bias voltage and the reverse recovery time.
The SDUR2030 diode is a popular choice for applications requiring high efficiency and reliability. Its construction and low forward voltage allows for higher current ratings, making it an attractive choice for many power supply and high-power applications that require a high level of protection. The diode is constructed from a single piece of silicon, which minimizes the amount of heat generated. This also reduces the risk of thermal runaways. Furthermore, the diode has an overall low operating temperature, which allows for more efficient operations in the event of an overload.
The SDUR2030 is a high-efficiency, reliable, and very cost-effective single-phase silicon diode rectifier. Its robust construction and low forward voltage allows for higher current ratings, making it an attractive choice for many power supply and high-power applications. It is also designed to have an overall low operating temperature, enabling more efficient operations in the event of an overload. Finally, the diode has a fast reverse recovery time, which means that the current passing through the diode is not significantly slowed down, allowing the applications to achieve greater performance. The SDUR2030 is a great choice for applications that require high efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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