SDUR6020W

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	60A
Voltage - Forward (Vf) (Max) @ If:	1.08V @ 60A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	40µA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-247-2
Supplier Device Package:	TO-247AC
Operating Temperature - Junction:	-55°C ~ 150°C

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SDUR6020W is a diode-rectifier single packaged in a small SOT-23-3 Surface Mount package. It is designed for use in high-frequency power applications where space and thermal constraints are a critical factor. The device is capable of delivering up to 10 Watts of power and is suited for continuous operation up to 110A with pulse capability up to 175A. It provides a temperature range from -40 to 125 °C, making it ideal for high temperature applications.The SDUR6020W is a general-purpose, low-cost, high-efficiency rectifier diode. It is a single diode with a bolted construction. The diode utilizes selectively processed N-type epitaxial layers that permit low forward voltages, excellent current carrying capability, and high frequency operation. In addition, the diode is isolated to allow parallel operation and to prevent thermal runaway. The device offers low forward voltage drop and high frequency switching capability.The SDUR6020W is mainly used as a rectifier in a variety of applications. It can be used to convert alternating current (AC) power to direct current (DC) in a variety of applications including power supplies, adapters, LED lighting and motor drives. This diode can also be used to limit or control the current in an application such as an RS-232 interface. The diode is also suitable for use in other applications that require rectification, such as voltage regulators and voltage multipliers.The working principle of the SDUR6020W is based on the principles of p-n junction diodes. The diode is composed of two layers of semiconductor material, one layer of p-type semiconductor material and one layer of n-type semiconductor material. These two semiconductor layers create a depletion layer at their interface and form a junction. The depletion layer provides a path for charge carriers and current to flow across the junction. When a forward bias voltage is applied across the junction, electrons and holes move towards the junction in opposite directions. This causes the depletion layer to thin out, increasing the number of charge carriers available to cross the junction. When the right amount of forward bias voltage is applied, the current across the diode increases rapidly. As the current increases, the voltage drop across the diode also increases. When the forward bias voltage is removed, the depletion layer thickens and the current across the diode decreases. This process reverses the forward bias voltage and results in a reverse current, which is blocked by the diode and does not allow any current to flow from the anode to the cathode.The SDUR6020W is a low-cost, high-efficiency rectifier diode. It is small in size and has a wide temperature range, making it an ideal choice for many applications. The device has a low forward voltage drop and high frequency switching capability, making it well suited for use in high-frequency power applications. With its low cost and high efficiency, the SDUR6020W is an excellent choice for a variety of applications where cost, space and thermal constraints are important factors.

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