SE12DGHM3/I

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The SE12DGHM3/I is a single rectifier diode component that utilizes a low forward voltage and low leakage current in order to provide superior performance in various applications. It is commonly used for power converters, inverters, motor drives, and other power electronic applications.

The SE12DGHM3/I Rectifier Diode is an ultrafast recovery rectifier with a forward voltage of only 0.2 V and a low leakage current of 0.25 mA (max). It has a low forward voltage drop and fast switching speed to help reduce conduction losses in power converters and inverters. The diode also has a low IRMS (repetitive peak forward current) of 5 A (max), making it suitable for use in high frequency applications. The component can operate up to 175°C and features a high temperature stable construction.

The SE12DGHM3/I Rectifier Diode provides high stability under surge currents and polarity reversal. It has a temperature coefficient of 0.09%/°C and is rated for use up to 175°C. The diode has a low reverse current rating of 0.25 mA (max) and is designed to withstand overloads up to 10 amperes during normal operation. The component also has a low reverse recovery time of 10 ns (max) to help prevent current spikes during switching operations.

The SE12DGHM3/I Rectifier Diode’s working principle is based on the physics of P–N junction of a semiconductor material. At the N–type doping material, there are more electrons while at the P–type doping material, there are more absence of electrons than at the N–type doping material. When a potential is applied across the junction, the electrons at the N–type material will be driven across the junction towards the P–type material. As a result, a current is generated and the charge carriers will be drained from the N–type material to the P–type material. This is the basic principle of a rectifier diode and applies to the SE12DGHM3/I as well.

The SE12DGHM3/I Rectifier Diode finds use in many applications as its low forward voltage and low leakage current make it an ideal choice for power electronic applications. It is often used in applications that require ultrafast recovery times, such as power inverters, power converters, and motor drive systems. The diode’s low reverse current rating makes it suitable for use in high frequency applications as well. Furthermore, its high temperature stability and overload protection features provide the necessary protection to ensure safe and reliable operation in any application.

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